XVT9007 Datasheet, PDF (1/3 Pages) RF Monolithics, Inc – Voltage Controlled Temperature Compensated Crystal Oscillator

Preliminary
• Voltage Controlled Temperature Compensated Crystal Oscillator
• Excellent Frequency Stability & Low Phase Noise
• 3.2 x 2.5 x 1.3 mm Surface-Mount Case
• Complies with Directive 2002/95/EC (RoHS)
Pb
XVT9007
19.6608 MHz
VCTCXO
Electrical Characteristics
Characteristic
Nominal Frequency
Storage Temperature
Operating Temperature Range
Power Supply Voltage
Output Voltage with Load 10 pF||10 KΩ
Output Wave form
Power Supply Current
Control Voltage
Control Voltage Input Impedance
Frequency Tolerance, Vcontrol = 1.4 V (after Reflow)
Frequency Stability versus:
Temperature, -20 to 75 °C
Supply Voltage, 2.66 to 2.94 V
Load 10 pF||10 KΩ ±10%
Control Voltage Frequency Range (1.4 ±1.0 V)
Start Up Time, 90% of final RF level in V_P-P
Aging @ 25 °C
Harmonics
SSB Phase Noise @ 1 kHz Carrier Offset
Stanard Shipping Quantity on 180 mm (7”) Reel
Lid Symbolization
SM3225-4 Case
Sym
Fo
Vcc
Vout
Icc
Vcon
Notes
Minimum Typical Maximum
19.660800
-40
+85
-20
+75
2.66
2.8
2.94
0.8
clipped sinewave
2.0
1.4±1.0
100K
±2 ppm max @ 25 °C ±3 °C
Units
MHz
°C
°C
V
V_P-P
mA
V
ohms
±2.5
±0.2
±0.2
±8
±14
2.0
±1
-5.0
-130 dBc/Hz maximum
1000
9007 // YWWS
ppm
ppm
ppm
ppm
ms
ppm/year
dBc
units
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1. The design, manufacturing process, and specifications of this device are subject to change without notice.
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©2009-2010 by RF Monolithics, Inc.
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