XVT9006 Datasheet, PDF (1/3 Pages) RF Monolithics, Inc – Voltage Controlled Temperature Compensated Crystal Oscillator

Preliminary
• Voltage Controlled Temperature Compensated Crystal Oscillator
• Application: Wireless Communication Devices
• Excellent Frequency Stability & Low Phase Noise
• 3.2 x 2.5 x 1.3 mm Surface-Mount Case
• Complies with Directive 2002/95/EC (RoHS)
Pb
XVT9006
40 MHz
VCTCXO
Electrical Characteristics
Characteristic
Nominal Frequency
StorageTemperature Range
Operating Temperature Range
Power Supply Voltage
Output Voltage with Load 10 pF || 10 KΩ
Output Waveform
Power Supply Current
Control Voltage
Control Voltage Terminal Input Impedance
Frequency Tolerance after Reflow, Vcon = 1.5 V
Frequency Stability:
Versus Temperature, -30 to 85 °C
Versus Supply Voltage, 2.8 V ±5%
Versus Load Variation, 10 pF ||10 KΩ ±10%
Aging
Frequency Control Range, Vcon = 1.4±1.0 V
Start Up Time, 90% of final RF level in Vp-p
Harmonics
SSB Phase Noise @ 10 kHz Carrier Offset
Stanard Shipping Quantity on 180 mm (7”) Reel
Lid Symbolization
SM3225-4 Case
Sym
Fo
Vcc
Vout
Icc
Vcon
Notes
Minimum Typical Maximum
40.000000
-40
+85
-30
+85
2.8
0.8
Clipped Sinewave
2.0
1.4±1.0
100K
±1.0 ppm max @ 25 °C ±3 °C
±2.0
±0.3
±0.2
±1 ppm
±10
2.0
-5.0
-130 dBc/Hz max
1000
9006 // YWWS
Units
MHz
°C
°C
V
Vp-p
mA
V
ohms
ppm
ppm
ppm
ms
dBc
units
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1. The design, manufacturing process, and specifications of this device are subject to change without notice.
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©2009-2010 by RF Monolithics, Inc.
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