XVT9003-1 Datasheet, PDF (1/3 Pages) RF Monolithics, Inc – Voltage Controlled Temperature Compensated Crystal Oscillator

Preliminary
• Voltage Controlled Temperature Compensated Crystal Oscillator
• Excellent Frequency Stability & Low Phase Noise
• 3.2 x 2.5 x 1.2 mm Surface-mount Case
• Complies with Directive 2002/95/EC (RoHS) Pb
XVT9003-1
19.200000 MHz
VCTCXO
Electrical Characteristics
Characteristic
Nominal Frequency
Component Storage Temperature Range
Storage Temperature Range in Tape and Reel
Soldering Profile, 10 seconds, up to 5 cycles
Operating Temperature Range
Power Supply Voltage
Output Voltage with Load 10 pF||10 KΩ
Output Waveform
Power Supply Current
Control Voltage
Control Voltage Input Impedance
Frequency Tolerance, Single Solder Reflow, Vcontrol = 1.50 V
Frequency Stability versus:
Temperature, -40 to 85 °C
Supply Voltage, 3.14 to 3.46 V
Load 10 pF||10 KΩ ±10%
Control Voltage Frequency Range (1.5 ±1.0 V)
Start Up Time, 90% of final RF level in V_P-P
Aging @ 25 °C
Harmonics
SSB Phase Noise @ 1 kHz Carrier Offset
Stanard Shipping Quantity on 180 mm (7”) Reel
Lid Symbolization
Sym
fo
Vcc
Vout
Icc
Vcon
Notes
SM3225-4 Case
Minimum Typical Maximum
19.200000
-55
+125
-40
+85
260
-40
+85
3.14
3.30
3.46
0.8
clipped sinewave
2.0
1.5±1.0
100K
±2.0 ppm max @ 25 °C ±2 °C
Units
MHz
°C
°C
°C
°C
V
V_P-P
mA
V
ohms
±1.0
±0.2
±0.2
±8
2.0
±1
-5.0
-130
1000
9003-1/YWWS
ppm
ppm
ppm
ppm/V
ms
ppm/year
dBc
dBc/Hz
units
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1. The design, manufacturing process, and specifications of this device are subject to change without notice.
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©2009-2010 by RF Monolithics, Inc.
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XVT9003-1 3/15/10