SF2002E Datasheet, PDF (1/5 Pages) RF Monolithics, Inc – 942.5 MHz SAW Filter

®
• RF Filter for EGSM
• Low Loss Design
• No Matching Circuit Required
• 3.0 x 3.0 x 1.3 mm Package
• Complies with Directive 2002/95/EC (RoHS) _Pb
SF2002E
942.5 MHz
SAW Filter
Absolute Maximum Ratings
Rating
Maximum Input Power
DC voltage between Terminals
Operating Temperature
Value
+15
-5 ~ +5
-30 to +85
Units
dBm
VDC
°C
SM3030-6
Electrical Characteristics
Characteristic
Sym
Notes
Min
Nominal Operating Frequency
f_C
Passband
Insertion Loss (925~960 MHz)
IL
Amplitude Ripple (925~960 MHz)
Attenuation
D.C.~905 MHZ
17.0
905~915 MHZ
5.0
980~1000 MHZ
13.0
1000~2000 MHZ
20.0
VSWR (925~960 MHz)
2.2
Input Z_IN
1
Output Z_OUT
1
Typ
947.5
2.2
0.8
20.5
15.0
30.0
23.0
50
50
Max
Units
MHz
3.0
dB
1.5
dB
dB
dB
dB
dB
2.7
dB
Ω
Ω
Case Style
Lid Symbolization (YY=year, WW=week, D=day)
SM3030-6 3 x 3 mm Nominal Footprint
597 YYWWD
Electrical Connections
Connection
Input
Output
Ground
Terminals
2
5
All others
50
pin 2
pin 5
SAW Filter
TOP VIEW
50
All Others
Notes:
1. Unless noted otherwise, all specifications apply over the operat-
ing temperature range with filter soldered to the specified demonstra-
tion board with impedance matching to 50 Ω and measured with 50 Ω
network analyzer.
2. Unless noted otherwise, all frequency specifications are referenced to
the nominal center frequency, fc.
3. Rejection is measured as attenuation below the minimum IL point in
the passband. Rejection in final user application is dependent on
PCB layout and external impedance matching design. See Applica-
tion Note No. 42 for details.
4. "LRIP" or "L" after the part number indicates "low rate initial produc-
tion" and "ENG" or "E" indicates "engineering prototypes."
5. The design, manufacturing process, and specifications of this filter
are subject to change.
6. Either Port 1 or Port 2 may be used for either input or output in the
design. However, impedances and impedance matching may vary
between Port 1 and Port 2, so that the filter must always be installed
in one direction per the circuit design.
7. US and international patents may apply.
8. RFM, stylized RFM logo, and RF Monolithics, Inc. are registered
trademarks of RF Monolithics, Inc.
9. ©Copyright 1999, RF Monolithics Inc.
10. Electrostatic Sensitive Device. Observe precautions for handling.
RF Monolithics, Inc. Phone: [phone]
Fax: [phone]
RFM Europe
Phone: [phone]
Fax: [phone]
©1999 by RF Monolithics, Inc. The stylized RFM logo are registered trademarks of RF Monolithics, Inc.
E-mail: [e-mail]
http://www.rfm.com
SF2002E-053106
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