SF1141B-4 Datasheet, PDF (1/3 Pages) RF Monolithics, Inc – Designed for SDARS IF Receiver

• Designed for SDARS IF Receiver
• Low Insertion Loss
• 5.0 X 7.0 mm Surface-Mount Case
• Differential Input and Output
• Complies with Directive 2002/95/EC (RoHS)
Absolute Maximum Ratings
Rating
Maximum Incident Power in Passband
Max. DC voltage between any 2 terminals
Storage Temperature Range
Max Soldering Profile
Pb
Value
Units
+10
dBm
30
VDC
-40 to +85
°C
265°C for 10 s
SF1141B-4
75.00 MHz
SAW Filter
SMP-03-S
Electrical Characteristics
Characteristic
Nominal Center Frequency
Passband
Insertion Loss at fc
1dB Passband
Fast Amplitude Ripple over fc ±6.35 MHz
Group Delay Variation over fc ±6.35 MHz
Rejection
fc-100 to fc-18.8 MHz
fc-18.8 to fc-10.95 MHz
fc+10.95 to fc+18.8 MHz
fc+18.8 to fc+100 MHz
Operating Temperature Range
Differential Input and Output Impedance
Case Style
Lid Symbolization (YY=year, WW=week, S=shift) See note 4
Sym
f_C
IL
BW₁
GDV
T_A
Notes
1
1, 2
1, 2, 3
1
6
Electrical Connections
Connection
Terminals
Port 1 Hot
10
Port 1 Ground Return or Hot
1
Port 2 Hot
5
Min
Typ
Max
Units
75.000
MHz
12.5
16.0
dB
±6.35
±7.43
MHz
1.5
dB_P-P
75
200
ns_P-P
40
45
37
45
dB
30
36
40
45
-40
+85
°C
250 ohms
SMP-03-S 7 x 5 mm Nominal Footprint
RFM SF1141B-4 YYWWS
Port 2 Ground Return or Hot
6
Case Ground
All Others
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
1. Unless noted otherwise, all specifications apply over the operating temperature range with filter soldered to the specified demonstration board with
impedance matching to 50 Ω and measured with 50 Ω network analyzer.
2. Unless noted otherwise, all frequency specifications are referenced to the nominal center frequency, fc.
3. The design, manufacturing process, and specifications of this filter are subject to change.
4. Either Port 1 or Port 2 may be used for either input or output in the design. However, impedances and impedance matching may vary between Port
1 and Port 2, so that the filter must always be installed in one direction per the circuit design.
5. US and international patents may apply.
6. ©Copyright 1999, RF Monolithics Inc.
www.RFM.com E-mail: [e-mail]
©2008 by RF Monolithics, Inc.
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SF1141B-4 - 3/28/08