RO2135A Datasheet, PDF (1/2 Pages) RF Monolithics, Inc – 319.508 MHz SAW Resonator

®
• Ideal for 319 MHz Transmitters
• Very Low Series Resistance
• Quartz Stability
• Surface-Mount, Ceramic Case with 21 mm² Footprint
• Complies with Directive 2002/95/EC (RoHS)
The RO2135A is a one-port, surface-acoustic-wave (SAW) resonator in a surface-mount ceramic case. It
provides reliable, fundamental-mode, quartz frequency stabilization of fixed-frequency transmitters operating
at 319 MHz. Applications include remote-control and wireless security receivers operating in the USA under
FCC Part 15 and in Canada under DoC RSS-210.
RO2135A
319.508 MHz
SAW
Resonator
Absolute Maximum Ratings
CW RF Power Dissipation
Rating
DC Voltage Between Terminals (Observe ESD Precautions)
Case Temperature¹
Soldering Temperature
Value
+10
±30
-40 to +85
+250
Units
dBm
VDC
°C
°C
SM-2 Case
Electrical Characteristics
Characteristic
Center Frequency at +25 °C Absolute Frequency
Tolerance from 319.508 MHz
Insertion Loss
Quality Factor
Unloaded Q
50 Ω Loaded Q
Temperature Stability
Turnover Temperature
Turnover Frequency
Frequency Temperature Coefficient
Frequency Aging
Absolute Value during the First Year
DC Insulation Resistance between Any Two Terminals
RF Equivalent RLC Model Motional Resistance
Motional Inductance
Motional Capacitance
Transducer Static Capacitance
Test Fixture Shunt Inductance
Lid Symbolization (in Addition to to Lot and/or Date Code)
Sym
f_C
∆f_C
IL
Q_U
Q_L
T_O
f_O
FTC
|fA|
R_M
L_M
C_M
C_O
L_TEST
Notes
2, 3, 4, 5
2, 5, 6
5, 6, 7
6, 7, 8
1
5
5, 7, 9
5, 6, 9
2, 7
Minimum
Typical
319.508
10
1.0
8.768
3.4
1.1
19,200
1,500
25
f_C
0.032
≤10
8.4
80.9629
3.06
3.5
69.85
176
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
Maximum
±75
2.2
Units
MHz
kHz
dB
40
9.27
3.56
°C
ppm/°C²
ppm/yr
MΩ
Ω
µH
fF
pF
nH
1. Lifetime (10 year) frequency aging.
9. This equivalent RLC model approximates resonator performance near the
2.
The center frequency, f_C, is measured at the minimum insertion loss point,
resonant frequency and is provided for reference only. The capacitance C_O is
IL_MIN, with the resonator in the 50 Ω test system (VSWR ≤ 1.2:1). The shunt
inductance, L_TEST, is tuned for parallel resonance with C_O at f_C.
3. One or more of the following United States patents apply: 4,454,488 and
4,616,197.
4. Typically, equipment utilizing this device requires emissions testing and gov-
the static (nonmotional) capacitance between the two terminals measured at
low frequency (10 MHz) with a capacitance meter. The measurement
includes parasitic capacitance with”NC” pads unconnected. Case parasitic
capacitance is approximately 0.05 pF. Transducer parallel capacitance can
by calculated as: C_P ≈ C_O - 0.05 pF.
ernment approval, which is the responsibility of the equipment manufacturer.
5.
Unless noted otherwise, case temperature T_C = +25°C±2°C.
6. The design, manufacturing process, and specifications of this device are sub-
ject to change without notice.
7. Derived mathematically from one or more of the following directly measured
parameters: f_C, IL, 3 dB bandwidth, f_C versus T_C, and C_O.
8.
Turnover temperature, T_O, is the temperature of maximum (or turnover) fre-
quency, f_O. The nominal frequency at any case temperature, T_C, may be cal-
culated from: f = f_O [1 - FTC (T_O -T_C)²].
RF Monolithics, Inc. Phone: [phone]
Fax: [phone]
RFM Europe
Phone: [phone]
Fax: [phone]
©1999 by RF Monolithics, Inc. The stylized RFM logo are registered trademarks of RF Monolithics, Inc.
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http://www.rfm.com
RO2135A-060205
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