RO2102A-1 Datasheet, PDF (1/2 Pages) RF Monolithics, Inc – 423.22 MHz SAW Resonator

®
• Ideal for 423.22 MHz LOs in Superhet Receivers
• Low Series Resistance
• Quartz Stability
• Surface-Mount, Ceramic Case with 21 mm² Footprint
• Complies with Directive 2002/95/EC (RoHS)
The RO2102a-1 is a true one-port, surface-acoustic-wave (SAW) resonator in a surface-mount, ceramic case.
It provides reliable, fundamental-mode, quartz frequency stabilization of fixed-frequency oscillators operating
at 423.22 MHz. The RO2102A-1 is designed specifically for the LO of 433.92 MHz superhet receivers in re-
mote-control and wireless security applications operating under ETSI I-ETS 300 220 in Europe.
Absolute Maximum Ratings
Rating
CW RF Power Dissipation
DC Voltage Between Terminals (Observe ESD Precautions)
Case Temperature¹
Soldering Temperature (10 seconds / 5 cycles max.)
Value
+10
±30
-40 to +85
260
Units
dBm
VDC
°C
°C
RO2102A-1
423.22 MHz
SAW
Resonator
SM-2 Case
Electrical Characteristics
Characteristic
Center Frequency at +25 °C Absolute Frequency
Tolerance from 423.22 MHz
Insertion Loss
Quality Factor
Unloaded Q
50 Ω Loaded Q
Temperature Stability
Turnover Temperature
Turnover Frequency
Frequency Temperature Coefficient
Frequency Aging
Absolute Value during the First Year
DC Insulation Resistance between Any Two Terminals
RF Equivalent RLC Model Motional Resistance
Motional Inductance
Motional Capacitance
Transducer Static Capacitance
Test Fixture Shunt Inductance
Lid Symbolization
Sym
f_C
∆f_C
IL
Q_U
Q_L
T_O
f_O
FTC
|fA|
R_M
L_M
C_M
C_O
L_TEST
Notes
2, 3, 4, 5
2, 5, 6
5, 6, 7
6, 7, 8
1
5
5, 7, 9
5, 6, 9
2, 7
Minimum
Typical
423.22
1.1
16,350
1,950
10
25
f_C
0.032
≤10
1.0
13.5
83.0050
1.703730
1.7
77.62
146
CAUTION: Electrostatic Sensitive Device. Observe precautions for handling.
Notes:
Maximum
±50
2.0
40
26
Units
MHz
kHz
dB
°C
kHz
ppm/°C²
ppm/yr
MΩ
Ω
µH
fF
pF
nH
otes:
1. Lifetime (10 year frequency aging.
culated from: f = f_O [1 - FTC (T_O -T_C)²].
9. This equivalent RLC model approximates resonator performance near the
2.
The center frequency, f_C, is measured at the minimum insertion loss point,
IL_MIN, with the resonator in the 50 Ω test system (VSWR ≤ 1.2:1). The shunt
resonant frequency and is provided for reference only. The capacitance C_O is
the static (nonmotional) capacitance between the two terminals measured at
inductance, L_TEST, is tuned for parallel resonance with C_O at f_C.
low frequency (10 MHz) with a capacitance meter. The measurement
3. One or more of the following United States patents apply: 4,454,488 and
includes parasitic capacitance with a floating case. For usual grounded case
4,616,197.
applications (with ground connected to either pin 1 or pin 2 and to the case),
4. Typically, equipment utilizing this device requires emissions testing and gov-
add approximately 0.25 pF to CO.
ernment approval, which is the responsibility of the equipment manufacturer. 10. Packaged in 500PC Tape carrier.
5.
Unless noted otherwise, case temperature T_C = +25°C±2°C.
6. The design, manufacturing process, and specifications of this device are sub-
ject to change without notice.
7. Derived mathematically from one or more of the following directly measured
parameters: f_C, IL, 3 dB bandwidth, f_C versus T_C, and C_O.
8.
Turnover temperature, T_O, is the temperature of maximum (or turnover) fre-
quency, f_O. The nominal frequency at any case temperature, T_C, may be cal-
RF Monolithics, Inc. Phone: [phone]
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RO2102A-1-061901
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