TG1000-10 Datasheet, PDF (1/6 Pages) RFHIC – GaN Hybrid Power Amplifier

GaN Hybrid Power Amplifier TG1000-10
Product Features
• GaN on SiC HEMT
• In/Out 50Ω Impedance Matching
• Surface Mount Hybrid Type
• Small Size & Weight
• High Efficiency
• Low Cost
• Custom design available
Applications
• Radio System
• TRS(Trunked Radio System)
• RF Sub-Systems
• Base Station
Package Type : NP-18
Description
The power amplifier module is designed for TETRA (Terrestrial Trunked Radio, formerly known as Trans European Trunked Radio)
applications. TETRA networks are already operational in all the traditional PMR market segments, such as Public Safety,
Transportation, Utilities, Government, PAMR, Commercial & Industry and Oil & Gas. GaN HEMT technology is used and attached on
a copper sub carrier. It is connected by using bias and in/out matching circuit method with gold wire bonding.
Electrical Specifications @ V_ds=28V, V_gs @Idq, Ta=25℃
PARAMETER
UNIT
MIN
TYP
MAX
Frequency Range
MHz
100
-
1000
Power Gain @P1dB
dB
12
15
-
Pout @ P1dB
dBm
36
38
-
Efficiency @ P1dB
%
40
55
-
Ids @ P1dB
mA
-
475
700
Pout @ P3dB
dBm
38.5
40
-
Input Return Loss
dB
-
-10
-5
Supply Voltage
Vgs@Idq=1mA
Vgs@Idq
Vgs@Idq=5mA
V
-
28
-
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
TG Series have internal DC blocking capacitors at the RF input and output ports
CONDITION
ZS = ZL = 50 ohm
Vds = +28V
Vgs @Idq
Idq = 5mA
Vds= +28V, Idq=150mA
Vgs
Vds
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facilities : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 1.1