RWS02540-10 Datasheet, PDF (1/4 Pages) RFHIC – Wideband Power Amplifier

Wideband Power Amplifier
RWS02540-10
Product Features
• GaN on SiC Broadband High Power Amplifier
• 20 ~ 512MHz Operation Bandwidth
• Small Signal Gain 42dB min.
• 40W Typical. P3dB
Applications
• HF/VHF/UHF
Description
RWS02540-10 is a unique GaN-SiC wideband amplifier that powers 46dBm over a wide instantaneous bandwidth of 20-512MHz.
This affordable GaN wideband amplifier has been specifically developed for Broadcasting, Communication System and other
applications in general. This amplifier offers a typical small signal gain of 44dB, and typically draws 2.5A at +28V_cc.
Electrical Specifications @ V_CC = 28V; V_DC=7V; T = 25°C; Z_S = Z_L = 50Ω
PARAMETER
Operating Frequency
Small Signal Gain
Gain Variation vs Temperature
Gain Variation vs Frequency
P₃dB
OIP3 @ Po = +35dBm
(1MHz Tone spacing, CW 2-Tone)
UNIT
MHz
dB
dB
dBpp
dBm
dBm
MIN
20
42
-2
-
44
51
TYP
-
44
-
±1
46
53
MAX
512
2
±1.5
-
-
Input Return Loss
dB
-
-15
-10
N^TH Harmonic suppression
dBc
-
-25
-15
Supply Voltage
27.5
28
30
V
6
7
12
A
-
Quiescent Current consumption
mA
-
2.5
2.7
20
50
Current Consumption @ P₃dB
A
-
3.5
4.0
On/Off Switching Time*
uS
-
3
5
Shut Down or Switch On/Off
2.5
5
5.5
TTL Voltage**
V
0
-
0.5
Note.
1. Gate On/Off : High speed switching
2. Drain On/Off : 300ms delay
CONDITION
-
-
-20 ~ 60°C
-
20 ~ 512MHz
20 ~ 512 MHz
-
CW 1-tone
@Po = +43dBm
Vcc(=Vds)
V_DC
+28V
+7V
CW 1-tone
On : TTL "Low"
Off : TTL "High"(30mA@Disable)
On : TTL “High”(Enable)
Off : TTL “Low”
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version1.0