RWP20050-10 Datasheet, PDF (1/5 Pages) RFHIC – Wideband Power Amplifier

Wideband Power Amplifier
RWP20050-10
Product Features
• GaN on SiC Wideband Power Amplifier
• 1000 ~ 3000MHz Operation Bandwidth
• Power Gain 37dB @ Pin 10dBm
• 50W Typical @ Pin 10dBm
Applications
• Communication System
• General Purpose
Description
RWP20050-10 is a unique GaN-SiC wideband power amplifier that powers 47dBm over a bandwidth of 1000-3000MHz.
This GaN wideband power amplifier has been specifically developed for Communication System and other applications in general.
This amplifier offers a typical Power Gain of 37dB, and typically draws 1.2A at +32Vcc.
Electrical Specifications @ V_CC = 32V; Tc = 45°C; Z_S = Z_L = 50Ω
PARAMETER
Operating Frequency
Power Gain @ Pin 10dBm
Power Gain Flatness @ Pin 10dBm
Output Power @ Pin 10dBm
Input Return Loss
Supply Voltage
Quiescent Current consumption
Current Consumption @ Pin 10dBm
UNIT
MHz
dB
dBpp
dBm
dB
V
A
A
MIN
1000
35
-
45
-
31.5
-
-
TYP
-
37
±1.0
47
-10
32
1.2
5.0
MAX
3000
-
±2.0
-
-7
-
1.7
6.5
On/Off Switching Time*
uS
-
2
5
Shut Down or Switch On/Off
0
V
-
0.5
TTL Voltage**
2.5
5
5.5
Note.
*. Gate On/Off : High speed switching
**. Drain On/Off : 500ms delay
CONDITION
-
1000 ~ 3000MHz
1000 ~ 3000MHz
1000 ~ 3000MHz
-
Vcc(=Vds)
-
CW 1-tone
On : TTL "Low"
Off : TTL "High"(30mA@Disable)
On : TTL “Low”(Enable)
Off : TTL “High”
Korean Facilities : 82-31-8069-3036 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
1/5
All specifications may change without notice
Version 1.1