RWP03060-10 Datasheet, PDF (1/5 Pages) RFHIC – Wideband Power Amplifier

Wideband Power Amplifier
RWP03060-10
Product Features
• GaN on SiC Broadband High Power Amplifier
• 20 ~ 512MHz Operation Bandwidth
• Power Gain 38dB @ Pin 11dBm
• 80W Typical @ Pin 11dBm
Applications
• General Purpose
Description
The power amplifier module is designed for Broadcasting, Telecommunication, Medical and Other markets.
Operating frequency range is from 20 ~ 512MHz.
Gallium Nitride on SiC technology is used and attached on an aluminum sub carrier. Full in/out matching for broadband
performance is already applied.
Improved thermal handling by patented technology.
Electrical Specifications @ V_CC = 32V; Tc = 45°C; Z_S = Z_L = 50Ω
PARAMETER
Operating Frequency
UNIT
MHz
Power Gain @ Pin 11dBm
dB
Power Gain Flatness @ Pin 11dBm dBpp
Output Power @ Pin 11dBm
dBm
Input Return Loss
dB
Supply Voltage
V
Quiescent Current Consumption
A
Current Consumption @ Pin 11dBm
A
MIN
20
35
37
-
46
48
-
31.5
-
-
TYP
-
36
38
±1.0
47
49
-10
32
1.5
6.0
On/Off Switching Time*
uS
-
5
Shut Down or Switch On/Off
0
V
-
TTL Voltage**
2.5
5
NOTE
*. Gate On/Off : High speed switching
**. Drain On/Off : 300ms delay
MAX
512
-
-
±2.0
-
-
-7
-
2.0
8.0
10
0.5
5.5
CONDITION
-
20 ~ 50MHz
50 ~ 512MHz
20 ~ 512MHz
20 ~ 50MHz
50 ~ 512MHz
-
Vcc(=Vds)
-
CW 1-tone
On : TTL "Low"
Off : TTL "High"(30mA@Disable)
On : TTL “Low”(Enable)
Off : TTL “High”
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
1/5
All specifications may change without notice
Version 1.2