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RUP15050-11 Datasheet, PDF (1/6 Pages) RFHIC – GaN-SiC Broadband Amplifier | |||
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GaN-SiC Broadband Amplifier RUP15050-11
Product Features
⢠Solid-state linear amplifier design
⢠GaN on SiC HEMT
⢠Small and light weight
⢠Wide Band Operation 500 ~ 2500MHz
⢠50 Ohm Input/Output impedance matched
⢠Highly reliable and rugged design
⢠Harsh environmental condition
⢠High efficiency
⢠50W typical Psat
⢠Built-in sequence bias included
Applications
⢠Broadband communication
⢠Broadcasting
⢠General purpose RF amplifier
⢠Linear applications in the L/S Frequency Bands
Description
RUP15050-11 has been designed for RF system application frequencies from 500 ~ 2500MHz.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, wide bandwidth and
high efficiency.
Electrical Specifications @ VDD=30VDC, T=25°C, 50Ω System
PARAMETER
UNIT
MIN
TYP
Operating Frequency
MHz
500
-
Operating Bandwidth
MHz
-
2000
Output Power CW
W
-
50
Output Power @ P3dB G.C.P
W
-
20
Small Signal Gain
dB
45
60
Small Signal Gain Flatness
dB
-
± 1.5
Input VSWR
-
-
2.0:1
Harmonics @ P1dB G.C.P
dBc
10
-
Spurious Signals
dBc
60
70
Operating Voltage
V
28
30
Supply Current @ P sat
A
-
7
Supply Current @ P 3dB
A
-
6
* Please DO NOT ENTER RF INPUT POWER OVER +5dBm. (to prevent the main transistor from damaging)
MAX
2500
-
-
-
-
± 2.0
2.5 : 1
-
-
32
-
-
SYMBOL
fO
BW
PSAT
P3dB
GS
ÎGS
S11
HP1dB
Spur
V
IDD
IDD
Environmental Characteristics
PARAMETER
Operating Case Temperature
Storage Temperature
UNIT
°C
°C
MIN
0
-40
TYP
-
-
MAX
70
85
SYMBOL
TC
TS
Korean Facilities : 82-31-250-5078 / rfsales@rfhic.com
US Facility : 919-677-8780 / sales@rfhicusa.com
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All specifications may change without notice
Version 1.0
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