RUP15030-10 Datasheet, PDF (1/4 Pages) RFHIC – GaN-SiC Broadband Amplifier

Preliminary
GaN-SiC Broadband Amplifier
RUP15030-10
Product Features
• Solid-state linear amplifier design
• GaN on SiC HEMT
• Small and light weight
• Wide Band Operation 500~2500MHz
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• Harsh environmental condition
• High efficiency
• 30W typical Psat
Description
Application
• Broadband communication
• Broadcasting
• General purpose RF amplifier
• Linear applications in the L/S
Frequency Bands
The RUP15030-10 is designed for RF system application frequencies from 500MHz to 2.5GHz.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, wide
bandwidth and high efficiency.
Electrical Specifications @ VDD=+28VDC, T=25°C, 50Ω System
PARAMETER
Symbol
Min
Typ
Max
Unit
Frequency Range
BW
500
Output Power CW
Psat
20
30
Output Power @ P3dB G.C.P
P_3dB
5
15
Small Signal Gain
SSG
8
10
Small Signal Gain Flatness
ΔG
± 1.5
Input VSWR
S11
2.0:1
Harmonics @ P1dB G.C.P
H
Spurious Signals
Spur
-70
Operating Voltage
VDC
27
28
Supply Current @ P _sat
IDD
4
Supply Current @ P _3dB
IDD
2.5
* Please DO NOT ENTER RF INPUT POWER OVER +39dBm. (to prevent the main from damaging)
2500
± 2.0
2.5:1
-10
-60
30
5
3.5
MHz
Watt
Watt
dB
dB
-
dBc
dBc
Volt
Amp
Amp
Environmental Characteristics
PARAMETER
Symbol
Min
Typ
Max
Unit
Operating Case Temperature
Tc
0
+70
°C
Storage Temperature
Ts
-40
+85
°C
Mechanical Specifications
PARAMETER
Dimensions ( L x W x H )
RF Connectors In/Out
Cooling
Value
90.0 x 50.0 x 16.0
SMA Female
External Heat sink + airflow
Units
mm
Limits
Max
▪ Tel : [phone]
▪ [e-mail]
▪ All specifications may change without notice.
▪ Version 0.3