RUP15020-11_14 Datasheet, PDF (1/6 Pages) RFHIC – GaN-SiC Broadband Amplifier

GaN-SiC Broadband Amplifier RUP15020-11
Product Features
• Solid-state linear amplifier design
• GaN on SiC HEMT
• Small and light weight
• Wide Band Operation 500 ~ 2500MHz
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• Harsh environmental condition
• High efficiency
• 25W typical Psat
• Built-in sequence bias included
Applications
• Broadband communication
• Broadcasting
• General purpose RF amplifier
• Linear applications in the L/S Frequency Bands
Description
RUP15020-11 has been designed for RF system application frequencies from 500 ~ 2500MHz.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, wide bandwidth
and high efficiency.
Electrical Specifications @ VDD=30VDC, T=25°C, 50Ω System
PARAMETER
UNIT
MIN
TYP
Operating Frequency
MHz
500
-
Operating Bandwidth
MHz
-
2000
Output Power CW
W
10
25
Output Power @ P3dB G.C.P
W
5
15
Small Signal Gain
dB
45
50
Small Signal Gain Flatness
dB
-
± 1.5
Input VSWR
-
-
2.0:1
Harmonics @ P1dB G.C.P
dBc
10
-
Spurious Signals
dBc
60
70
Operating Voltage
V
28
30
Supply Current @ P _3dB
A
-
2.5
Supply Current @ P _sat
A
-
3.5
* Please DO NOT ENTER RF INPUT POWER OVER +5dBm. (to prevent the main transistor from damaging)
MAX
2500
-
-
-
-
± 2.0
2.5 : 1
-
-
32
-
-
SYMBOL
f_O
BW
P_SAT
P_3dB
G_S
ΔG_S
S₁₁
H_P1dB
Spur
V
I_DD
I_DD
Environmental Characteristics
PARAMETER
Operating Case Temperature
Storage Temperature
UNIT
°C
°C
MIN
0
-40
TYP
-
-
MAX
70
85
SYMBO
L
T_C
T_S
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 3.0