RTP26020-S0 Datasheet, PDF (1/3 Pages) RFHIC – GaN-SiC Pallet Amplifier

GaN-SiC Pallet Amplifier
RTP26020-S0
Product Features
• Doherty amplifier design
• GaN on SiC HEMT
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency, High Gain
• 16W typical P_AVG
Application
• WiMAX DPD amplifier
• General purpose RF amplifier
Description
The RTP26020-S0 is designed for RF system application frequencies from 2496MHz to 2690MHz, with high gain.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high
efficiency. The RTP26020-S0 is DPD application amplifier.
Electrical Specifications @ VDD=+30VDC, T=25°C, 50Ω
System _PARAMETER
Symbol
Min
Typ
Max
Unit
Frequency Range
BW
2496
-
2690
MHz
Output Power
P_AVG
-
16
20
Watt
Output Power @ Psat G.C.P
P_sat
-
100
-
Watt
Small Signal Gain
SSG
45
-
-
dB
Small Signal Gain Flatness
ΔG
Gain Variation
ΔGt
-
± 1.0
±2
dB
± 3.0
dB
ACLR @ WiMAX 10MHz 2FA
ACLR
-25dBr
dBr
Input VSWR
S11
-
1.5:1
1.7:1
-
Forward Coupling
FC
-
-30
-
dB
Operating Voltage
VDC
28
30
-
Volt
Efficiency @ Pout 16Watt
E
30
%
※ Test Signal Condition : WCDMA 4FA
Environmental Characteristics
PARAMETER
Symbol
Min
Typ
Max
Unit
Operating Temperature
Tc
-20
-
+50
°C
Storage Temperature
Ts
-30
-
+60
°C
Mechanical Specifications
PARAMETER
Dimensions ( L x W x H )
RF Connectors In/Out
RF Connector Coupling
DC Connectors / Controls
Cooling
▪ Tel : [phone]
▪ [e-mail]
Value
150 x 90 x 18.5
SMA Female
MCX Female
Main 4Pin, Sub 6Pin
External Heat sink + airflow
Units
mm
Limits
Max
▪ All specifications may change without notice.
▪ Version 0.3