RTP26020-D1 Datasheet, PDF (1/5 Pages) RFHIC – RTP26020-D1 has been designed for RF system application frequencies from 2496MHz to 2690MHz, with high gain.

GaN-SiC Pallet Amplifier RTP26020-D1
Product Features
• Doherty amplifier design
• GaN on SiC HEMT
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency, High Gain
• 16W typical P_AVG
Application
• WiMAX DPD amplifier
• General purpose RF amplifier
Description
RTP26020-D1 has been designed for RF system application frequencies from 2496MHz to 2690MHz, with high gain.
This DPD application Pallet Amplifier has been developed with GaN on SiC HEMT technology that has advantages of high
breakdown voltage, high linearity, and high efficiency.
Electrical Specifications @ VDD=+30VDC, T=25°C, 50Ω
System _PARAMETER
Symbol
Min
Typ
Frequency Range
BW
2496
-
Output Power
P_AVG
-
16
Output Power @ Psat G.C.P
P_sat
-
75
Small Signal Gain
SSG
50
-
Small Signal Gain Flatness
ΔG
-
± 1.0
Gain Variation
ΔGt
± 3.0
ACLR @ WiMAX 10MHz 2FA
ACLR
-25dBr
Input VSWR
S11
-
1.5:1
Forward Coupling
FC
-
-30
Operating Voltage
VDC
28
30
Efficiency @ Pout 16Watt
E
31
33
※ Test Signal Condition: WCDMA 4FA (PAR 8dB) or WiMAX 2FA (PAR 8dB)
Test DPD solution: TI DPD
Environmental Characteristics
PARAMETER
Symbol
Min
Typ
Operating Temperature
Tc
-20
-
Storage Temperature
Ts
-30
-
Mechanical Specifications
PARAMETER
Value
Dimensions ( L x W x H )
150 x 90 x 18.5
RF Connectors In/Out
SMA Female
RF Connector Coupling
MCX Female
DC Connectors / Controls
MDF7-10S-2.54DSA
Cooling
External Heat sink + airflow
Max
2690
-
-
-
±2
1.7:1
-
-
Max
+60
+90
Units
mm
Unit
MHz
Watt
Watt
dB
dB
dB
dBr
-
dB
Volt
%
Unit
°C
°C
Limits
Max
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▪ All specifications may change without notice.
▪ Version 0.4