RTP26020-10 Datasheet, PDF (1/2 Pages) RFHIC – GaN-SiC Pallet Amplifier

GaN-SiC Pallet Amplifier
RTP26020-10
Product Features
• Doherty amplifier design
• GaN on SiC HEMT
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency
• 16W typical P_AVG
Application
• WiMAX DPD amplifier
• General purpose RF amplifier
Description
The RTP26020-10 is designed for RF system application frequencies from 2496MHz to 2690MHz.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high
efficiency. The RTP26020-10 is DPD application amplifier.
Electrical Specifications @ VDD=+30VDC, T=25°C, 50Ω
System _PARAMETER
Symbol
Min
Typ
Max
Unit
Frequency Range
BW
2496
-
2690
MHz
Output Power
P_AVG
-
Output Power @ Psat G.C.P
Psat
-
16
20
Watt
100
-
Watt
Small Signal Gain
SSG
20
25
-
dB
Small Signal Gain Flatness
ΔG
Gain Variation
ΔGt
-
± 1.0
±2
dB
± 3.0
dB
ACLR @ WiMAX 10MHz 2FA
ACLR
-25dBr
dBr
Input VSWR
S11
-
1.5:1
2.0:1
-
Operating Voltage
VDC
28
30
-
Volt
Efficiency @ Pout 10Watt
E
※ Test Signal Condition : WCDMA 4FA
Environmental Characteristics
PARAMETER
Symbol
Operating Temperature
Tc
Storage Temperature
Ts
Mechanical Specifications
PARAMETER
Min
-20
-30
Value
30
%
Typ
Max
Unit
-
+50
°C
-
+60
°C
Units
Limits
Dimensions ( L x W x H )
105 x 60 x 18.5
mm
Max
Cooling
External Heat sink + airflow
▪ Tel : [phone]
▪ [e-mail]
▪ All specifications may change without notice.
▪ Version 0.1