RTP26010-S0 Datasheet, PDF (1/3 Pages) RFHIC – GaN-SiC Pallet Amplifier

GaN-SiC Pallet Amplifier
RTP26010-S0
Product Features
• Doherty amplifier design
• GaN on SiC HEMT
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency, High Gain
• 8W typical P_AVG
Application
• WiMAX DPD amplifier
• General purpose RF amplifier
Description
The RTP26010-S0 is designed for RF system application frequencies from 2496MHz to 2690MHz, with high gain.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high
efficiency. The RTP26010-S0 is DPD application amplifier.
Electrical Specifications @ VDD=+30VDC, T=25°C, 50Ω
System_PARAMETER
Symbol
Min
Typ
Max
Unit
Frequency Range
BW
2496
-
2690
MHz
Output Power
P_AVG
-
Output Power @ Psat G.C.P
Psat
-
8
10
Watt
50
-
Watt
Small Signal Gain
SSG
45
-
-
dB
Small Signal Gain Flatness
ΔG
-
± 1.0
±2
dB
Gain Variation
ΔGt
± 3.0
dB
ACLR @ WiMAX 10MHz 2FA
ACLR
-25dBr
dBr
Input VSWR
S11
-
1.5:1
1.7:1
-
Forward Coupling
FC
-
-30
-
dB
Operating Voltage
VDC
28
30
-
Volt
Efficiency @ Pout 10Watt
E
※ Test Signal Condition : WCDMA 4FA
Environmental Characteristics
PARAMETER
Symbol
Operating Temperature
Tc
Storage Temperature
Ts
Mechanical Specifications
PARAMETER
30
%
Min
-20
-30
Value
Typ
Max
Unit
-
+50
°C
-
+60
°C
Units
Limits
Dimensions ( L x W x H )
150 x 90 x 18.5
mm
Max
RF Connectors In/Out
SMA Female
RF Connector Coupling
MCX Female
DC Connectors / Controls
Main 4Pin, Sub 6Pin
Cooling
External Heat sink + airflow
▪ Tel : [phone]
▪ [e-mail]
▪ All specifications may change without notice.
▪ Version 0.3