RTP26010-N1 Datasheet, PDF (1/4 Pages) RFHIC – The RTP26010-N1 is designed for RF system application frequencies from 2570MHz to 2690MHz, with high gain.

Preliminary
GaN-SiC Pallet Amplifier
RTP26010-N1
Product Features
• Doherty amplifier design
• GaN on SiC HEMT
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency
• 10W, 12W typical P_AVG
Application
• WCDMA, LTE DPD amplifier
• General purpose RF amplifier
Description
The RTP26010-N1 is designed for RF system application frequencies from 2570MHz to 2690MHz, with high gain.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high
efficiency. The RTP26010-N1 is DPD application amplifier.
Electrical Specifications @ VDD=+28VDC, T=25°C, 50Ω
System _PARAMETER
Symbol
Min
Typ
Max
Unit
Frequency Range
BW
2570
-
2690
MHz
Output Power
P_AVG
-
10
12
Watt
Output Power @ Psat G.C.P
P_sat
-
47.5
-
Watt
Small Signal Gain
SSG
-
40
-
dB
Small Signal Gain Flatness
ΔG
-
± 1.0
±2
dB
Gain Variation
ΔGt
± 3.0
-
dB
ACLR @ WCDMA 20MHz 4FA
ACLR
-25
-30
-
dBr
ACLR with DPD
ACLR
-
-50
-
dBr
Forward Coupling
FC
-
-30
-
dB
Operating Voltage
VDC
-
28
-
Volt
Efficiency @ Pout 10Watt WCDMA
E
-
38
-
%
Efficiency @ Pout 12Watt LTE
E
-
40
-
%
※ Test Signal Condition: WCDMA 20MHz 4FA (PAR 7.5dB), LTE 10MHz 1FA (PAR 6.5dB), Test DPD solution : Opticron DPD
Environmental Characteristics
PARAMETER
Symbol
Min
Typ
Max
Unit
Operating Temperature
Tc
-30
-
+60
°C
Storage Temperature
Ts
-40
-
+90
°C
Mechanical Specifications
PARAMETER
Dimensions ( L x W x H )
Weight
RF Connectors In/Out/Coupling
DC Connectors / Controls
Cooling
Value
100 x 50 x 20
170
MCX / SMA / MCX Female
5267-04
External Heat sink + airflow
Units
mm
g
Limits
Max
Typical
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▪ All specifications may change without notice.
▪ Version 0.1