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RTP26010-12 Datasheet, PDF (1/6 Pages) RFHIC – RTP26010-12 has been designed for RF system application frequencies from 2496MHz to 2690MHz, with high gain.
GaN-SiC Pallet Amplifier
RTP26010-12
Product Features
• Doherty amplifier design
• GaN on SiC HEMT
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency, High Gain
• 8~10W typical Pavg
Application
• WiMAX DPD amplifier
• General purpose RF amplifier
Description
RTP26010-12 has been designed for RF system application frequencies from 2496MHz to 2690MHz, with high gain. This
DPD application Pallet Amplifier has been developed with GaN on SiC HEMT technology that has advantages of high
breakdown voltage, high linearity, and high efficiency.
Electrical Specifications @ VDD=+30VDC, T=25°C, 50Ω
PARAMETER
Symbol
Min
Typ
Frequency Range
Output Power
Output Power @ Psat G.C.P
Small Signal Gain
Small Signal Gain Flatness
Gain Variation
ACLR @ WiMAX 10MHz 2FA
ACLR with DPD
Forward Coupling
BW
PAVG
Psat
SSG
ΔG
ΔGt
ACLR
ACLR
FC
2496
-
-
58
-
-23
-32
-
8
60
60
± 1.0
± 3.0
-25
-46
-31
Operating Voltage
VDC
28
30
Efficiency @ Pout 10Watt(PAR 8.0dB)
E
-
35
※ Test Signal Condition: WiMAX 10MHz 2FA (PAR 8.0dB), Test DPD solution : TI DPD
Environmental Characteristics
PARAMETER
Symbol
Min
Typ
Operating Temperature
Tc
-30
-
Storage Temperature
Ts
-40
-
Max
2690
10
-
-
±2
-30
-
-
Unit
MHz
Watt
Watt
dB
dB
dB
dBr
dBr
dB
Volt
%
Max
+60
+90
Unit
°C
°C
Mechanical Specifications
PARAMETER
Dimensions ( L x W x H )
Weight
RF Connectors In/Out
RF Connector Coupling
DC Connectors / Controls
Cooling
Value
130 x 80 x 18.8
300
SMA Female
MCX Female
MDF7-10S-2.54DSA
External Heat sink + airflow
Units
mm
g
Limits
Max
Typical
▪ Tel : 82-31-250-5011
▪ rfsales@rfhic.com
▪ All specifications may change without notice.
▪ Version 0.5