RTP23070-20 Datasheet, PDF (1/4 Pages) RFHIC – The RTP23070-20 is designed for RF system application frequencies from 2300MHz to 2400MHz, with high gain.

Preliminary
GaN-SiC Pallet Amplifier RTP23070-20
Product Features
• Doherty amplifier design
• GaN on SiC HEMT
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency, High Gain
• 70W typical P_AVG
Application
• LTE, WiMAX DPD amplifier
• General purpose RF amplifier
Description
The RTP23070-20 is designed for RF system application frequencies from 2300MHz to 2400MHz, with high gain.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high
efficiency. The RTP23070-20 is DPD application amplifier.
Electrical Specifications @ VDD=+48VDC, T=25°C, 50Ω
System _PARAMETER
Symbol
Min
Typ
Frequency Range
BW
2300
-
Output Power
P_AVG
-
48.5
Instantaneous Bandwidth
SBW
20
Output Power @ Psat G.C.P
P_sat
-
56.0
Small Signal Gain
SSG
50
55
Small Signal Gain Flatness
ΔG
-
Gain Variation
ΔGt
ACLR @ LTE 10MHz 1FA^※1
ACLR
± 0.5
± 3.0
-25
ACLR with DPD
ACLR
-55
Forward Coupling Level
FC
9
10
Operating Voltage 1
VDC1
48
Operating Voltage 2
VDC2
5.6
Chain Efficiency^※2 @ Pout 77.6W
EC
-
46
Pallet Efficiency @ Pout 70.8W
EP
-
42
Input Port Return Loss
IRL
-13
-18
Output Port Return Loss
ORL
-15
-18
※1 Test Signal Condition: LTE 10MHz 1FA(PAR 7.5dB), Test DPD solution: Optichron DPD(OP6180)
※2 Chain Efficiency is an entire operating transistor efficiency excluded isolator and coupler.
Max
2400
30
-
-
± 1.0
11
-
-
Unit
MHz
dBm
MHz
dBm
dB
dB
dB
dBc
dBc
dBm
Volt
Volt
%
%
dB
dB
Environmental Characteristics
PARAMETER
Symbol
Min
Typ
Max
Unit
Operating Temperature
Tc
-40
-
+60
°C
Storage Temperature
Ts
-45
-
+90
°C
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▪ All specifications may change without notice.
▪ Version 0.1