RTP23020-D1 Datasheet, PDF (1/5 Pages) RFHIC – RTP23020-D1 has been designed for RF system application frequencies from 2300MHz to 2400MHz, with high gain.

GaN-SiC Pallet Amplifier
RTP23020-D1
Product Features
• Doherty amplifier design
• GaN on SiC HEMT
• Small and light weight
• 50 Ohm Input/Output impedance
matched
• Highly reliable and rugged design
• High efficiency, High Gain
• 16 typical P_AVG
Application
• WiMAX DPD amplifier
• General purpose RF amplifier
Description
RTP23020-D1 has been designed for RF system application frequencies from 2300MHz to 2400MHz, with high gain. This
DPD application Pallet Amplifier has been developed with GaN on SiC HEMT technology that has advantages of high
breakdown voltage, high linearity, and high efficiency.
Electrical Specifications @ VDD=+30VDC, T=25°C, 50Ω
PARAMETER
Frequency Range
Output Power
Output Power @ Psat G.C.P
Small Signal Gain
Small Signal Gain Flatness
Gain Variation
ACLR @ WiMAX 10MHz 2FA
Input VSWR
Symbol
BW
P_AVG
P_sat
SSG
ΔG
ΔGt
ACLR
S11
Min
2300
-
-
-
-
-
Typ
-
16
75
55
± 1.0
± 2.0
-25dBr
1.5:1
Forward Coupling
FC
-
-30
Operating Voltage
VDC
-
30
Efficiency @ Pout 10Watt
E
31
33
※ Test Signal Condition: WCDMA 4FA (PAR 8.0dB) or WiMAX 2FA (PAR 8.0dB)
Test DPD solution: TI DPD
Environmental Characteristics
PARAMETER
Symbol
Min
Typ
Operating Temperature
Tc
-20
-
Storage Temperature
Ts
-30
-
Mechanical Specifications
PARAMETER
Dimensions ( L x W x H )
RF Connectors In/Out
RF Connector Coupling
DC Connectors / Controls
Cooling
Value
150 x 90 x 18.5
SMA Female
MCX Female
MDF7-10S-2.54DSA
External Heat sink + airflow
Max
2400
-
-
-
± 1.5
1.7:1
-
-
Max
+60
+90
Units
mm
Unit
MHz
Watt
Watt
dB
dB
dB
dBr
-
dB
Volt
%
Unit
°C
°C
Limits
Max
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▪ All specifications may change without notice.
▪ Version 0.4