RTP21025-10 Datasheet, PDF (1/5 Pages) RFHIC – The RTP21025-10 is designed for RF system application frequencies from 2110MHz to 2170MHz, with high gain.

Preliminary
GaN-SiC Pallet Amplifier
RTP21025-10
Product Features
• Doherty amplifier design
• GaN on SiC HEMT
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency, High Gain
• 25W typical P_AVG
Application
• WCDMA & LTE DPD amplifier
• General purpose RF amplifier
Description
The RTP21025-10 is designed for RF system application frequencies from 2110MHz to 2170MHz, with high gain.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high
efficiency. The RTP21025-10 is DPD application amplifier.
Electrical Specifications @ VDD=+28VDC, T=25°C, 50Ω
System _PARAMETER
Symbol
Min
Typ
Max
Unit
Frequency Range
BW
2110
-
2170
MHz
Output Power
P_AVG
-
44
Output Power @ Psat G.C.P
P_sat
-
51.5
Small Signal Gain
SSG
55
60
dBm
-
dBm
-
dB
Small Signal Gain Flatness
ΔG
-
± 1.0
±2
dB
Gain Variation
ΔGt
± 3.0
dB
ACLR @ WCDMA 20MHz 4FA
ACLR
-23
-25
dBc
ACLR with DPD
ACLR
-53
dBc
Forward Coupling
FC
-32
-31
-30
dB
Operating Voltage
VDC
28
-
Volt
Efficiency @ Pout 25Watt(PAR 7.5dB)
E
-
38
※ Test Signal Condition : WCDMA 20MHz 4FA (PAR 7.5dB), Test DPD solution : Optichron DPD
Environmental Characteristics
PARAMETER
Symbol
Min
Typ
-
Max
%
Unit
Operating Temperature
Tc
-30
-
+60
°C
Storage Temperature
Ts
-40
-
+90
°C
Mechanical Specifications
PARAMETER
Dimensions ( L x W x H )
Weight
RF Connectors In/Out
RF Connector Coupling
DC Connectors / Controls
Cooling
Value
150 x 90 x 18.5
300
SMA Female
MCX Female
5569-08(8pin), 5267-03A(3pin)
External Heat sink + airflow
Units
mm
g
Limits
Max
Typical
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▪ All specifications may change without notice.
▪ Version 0.6