RTP18080-20_15 Datasheet, PDF (1/4 Pages) RFHIC – GaN Power Amp Pallet

GaN Power Amp Pallet
Product Features
• Doherty amplifier design
• GaN on SiC HEMT
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency
• 80W typical P_AVG
RTP18080-20
Applications
• LTE DPD amplifier
• General purpose RF amplifier
Description
The RTP18080-20 is designed for RF system application frequencies from 1805 ~ 1880MHz, with high gain.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, and high efficiency.
The RTP18080-20 is a DPD application amplifier.
Electrical Specifications @ VDD= 48V, 50Ω System
PARAMETER
Frequency Range
Operating Bandwidth
Average Output Power
UNIT
MHz
MHz
dBm
MIN
1805
-
48.5
TYP
-
75
49
MAX
1880
-
-
Peak Output Power
(Pulse duty 10%)
dBm
55.7
56.2
-
ACPR (LTE 10MHz 1FA^*1)
@ Pout=49dBm Avg.
Pre-DPD
Post-DPD^*2
dBc
-
-
-23
-52
-
-
RF Gain @ 25℃
dB
56
57
58
Gain Variation
dB
± 3dB @ operating temperature
Gain Flatness
dB
-
± 0.5
±1
Input Return Loss
dB
-
-
-12
Output Return Loss
dB
-
-
-17
Operating Voltage
V
VDC1: 5.6±3%
VDC2:48 ±1V
5.6V
Current Consumption
A
48V
0.36
0.40
3.76
4.09
Efficiency @ 49dBm
%
40
44
-
Feedback Output level @ 49dBm
dBm
8
10
12
Note
1. Signal source condition : LTE 10MHz 1FA, PAPR 7.2dB@0.01% probability on CCDF
2. DPD Solution : Broadcom OP6180
SYMBOL
f_O
OBW
Pout
Psat
ACPR
G_P
G
G_F
S₁₁
S₂₂
VDC
IDD
Eff
FB
Korean Facilities : 82-31-8069-3036 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 1.0