RTP18050-S1 Datasheet, PDF (1/4 Pages) RFHIC – The RTP18050-S1 is designed for RF system application frequencies from 1830MHz to 1860MHz, with high gain.

Preliminary
GaN-SiC Pallet Amplifier
RTP18050-S1
Product Features
• Doherty amplifier design
• GaN on SiC HEMT
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency, High Gain
• 50W typical P_AVG
Application
• CDMA & LTE DPD amplifier
• General purpose RF amplifier
Description
The RTP18050-S1 is designed for RF system application frequencies from 1830MHz to 1860MHz, with high gain.
This Pallet Amplifier uses GaN on SiC HEMT technology which performs high breakdown voltage, high linearity, high
efficiency. The RTP18050-S1 is a CDMA & LTE DPD application amplifier.
Electrical Specifications @ VDD=+31VDC, T=25°C, 50Ω
System _PARAMETER
Symbol
Min
Typ
Max
Unit
Frequency Range
BW
1830
-
1860
MHz
Output Power
P_AVG
-
47
Output Power @ Psat G.C.P
P_sat
-
55.5
Small Signal Gain
SSG
50
55
dBm
-
dBm
-
dB
Small Signal Gain Flatness
ΔG
-
± 1.0
±2
dB
Gain Variation
ΔGt
± 3.0
dB
ACLR @ LTE 10MHz 1FA
ACLR
-30
-33
dBc
ACLR with DPD
ACLR
-59
dBc
Forward Coupling
FC
-39
-38
-37
dB
Operating Voltage
VDC
31
-
Volt
Efficiency @ Pout 50Watt
E
-
42
※ Test Signal Condition : LTE 10MHz 1FA (PAR 7.5dB), Test DPD solution : Optichron DPD
Environmental Characteristics
PARAMETER
Symbol
Min
Typ
-
%
Max
Unit
Operating Temperature
Tc
-30
-
+60
°C
Storage Temperature
Ts
-40
-
+90
°C
Mechanical Specifications
PARAMETER
Dimensions ( L x W x H )
Weight
RF Connectors In/Out/Coupling
DC Connectors / Controls
Cooling
Value
140 x 170 x 20
695
SMA Female/SMA Female/SMA Female
5569-08(8pin), 5267-03A(3pin)
External Heat sink + airflow
Units
mm
g
Limits
Max
Typical
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▪ All specifications may change without notice.
▪ Version 0.1