RTP09050-20 Datasheet, PDF (1/7 Pages) RFHIC – The RTP09050-20 is designed for RF system application frequencies from 925MHz to 960MHz, with high gain.

Preliminary
GaN Power Amp Pallet
RTP09050-20
Product Features
• Doherty amplifier design
• Small and light weight
• 50 Ohm Input/Output impedance matched
• Highly reliable and rugged design
• High efficiency, High Gain
• 52.5W typical P_AVG
Application
• LTE, GSM RRH
Description
The RTP09050-20 is designed for RF system application frequencies from 925MHz to 960MHz, with high gain. This Pallet
Amplifier uses GaN on Sic HEMT technology which performs high breakdown voltage, high linearity, and high efficiency.
The RTP09050-20 is a LTE DPD application amplifier
Electrical Specifications @ VDD= 45V, 50Ω System
PARAMETER
Frequency Range
Symbol
BW
Specification
925 ~ 960MHz
Operating Bandwidth within BW
Average Output Power
Peak Output Power
ACLR (LTE 1FA 10MHZ)
@ Po=+47.2dBm max.
OBW
Pout
Psat
ACLR
5 ~ 35MHz
47.2dBm(52.5W) Avg. @ LTE 1FA 10MHz
54.2dBm (Min.) @ Duty 10% Pulse
Pre-DPD
Post-DPD
-26dBc(Min) @±10MHz
-53dBc(Min) @±10MHz
@-30 ~ +65°C
45V, CFR 6.5dB
GSM Multi Carrier IMD
(PAPR 7.5dB)
RF Gain @ 25℃
Gain Flatness
Input Return Loss
Output Return Loss
Pre-DPD
-25dBc(Min) @±15MHz _{@-30 ~ +65°C}
IMD
Post-DPD
-55dBc(Min) @±15MHz ^{45V, CFR 7.5dB}
G
55dB (Min.)
ΔG
2.0 dB(Peak to peak) @ Operating Frequency
S11
-12dB (Max.)
S22
-17dB (Max.)
Normal Operating Voltage
Current Consumption
VDC
IDD
+5.6V & +45V
0.2A @ 5.6V (Max.)
3.0A @ 45V (Typ.)
Efficiency
Eff
39% @ 45V (Typ.)
Feedback Output level @ 47.2dBm
FB
+9dBm ± 1.5dB
Temp Detector
T
0.9V @ 40℃
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▪ All specifications may change without notice.
▪ Version 1.0