RTP08050-20B Datasheet, PDF (1/8 Pages) RFHIC – The RTP08050-20B is designed for RF system application frequencies from 837.5MHz to 957MHz, with high gain.

Preliminary
GaN Power Amp Pallet
RTP08050-20B
Product Features
• Broadband amplifier design
• Small and light weight
• 50 Ohm Input / Output impedance matched
• Highly reliable and rugged design
• High efficiency, High Gain
Application
• LTE Application
Description
The RTP08050-20B is designed for RF system application frequencies from 837.5MHz to 957MHz, with high gain.
This Pallet Amplifier uses GaN on Sic HEMT technology which performs high breakdown voltage, high linearity, and high
efficiency. The RTP08050-20B is a LTE DPD application amplifier.
Electrical Specifications @ VDD= 45V, 50Ω System
PARAMETER
Symbol
Specification
Frequency Range
BW
837.5~957MHz
Operating Bandwidth within BW
OBW
119.5MHz
Average Output Power
Pout
47.2dBm(52.5W) Avg. @ LTE 1FA 10MHz
Peak Output Power
ACLR (LTE 1FA 10MHZ)
@ Po=47.2dBm
RF Gain @ 25℃
Psat
ACLR
G
54 dBm (Min. Duty Cycle 10% Pulse)
Pre-DPD
Post-DPD
-27dBc(Min)
@±10MHz
-50dBc(Min)
@±10MHz
@-30 ~ +60°C
@45V
@CFR 6.5dB
55dB (Min.)
Gain Flatness
ΔG
3.0 dB(Peak to peak) @ Operating Frequency
Input Return Loss
S11
-12dB (Max.)
Output Return Loss
S22
-17dB (Max.)
Normal Operating Voltage
VDC
V1= +5.6V, V2= +45V
Current Consumption
IDD
@ Po=47.2dBm
0.3A @ 5.6V (Max.)
3.1A / 45V (Typ.)
Efficiency
Eff
38% @ 45V (Typ.)
Feedback Output level @ 47.2dBm
FB
+8dBm ± 2dB
Temp Detector
T
0.9V @ 40℃
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▪ All specifications may change without notice.
▪ Version 1.0