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RTP07050-20B Datasheet, PDF (1/8 Pages) RFHIC – The RTP07050-20B is designed for RF system application frequencies from 728MHz to 842.5MHz, with high gain.
Preliminary
GaN Power Amp Pallet
RTP07050-20B
Product Features
• Broadband amplifier design
• Small and light weight
• 50 Ohm Input / Output impedance matched
• Highly reliable and rugged design
• High efficiency, High Gain
Application
• LTE Application
Description
The RTP07050-20B is designed for RF system application frequencies from 728MHz to 842.5MHz, with high gain.
This Pallet Amplifier uses GaN on Sic HEMT technology which performs high breakdown voltage, high linearity, and high
efficiency. The RTP07050-20B is a LTE DPD application amplifier.
Electrical Specifications @ VDD= 45V, 50Ω System
PARAMETER
Frequency Range
Operating Bandwidth within BW
Average Output Power
Peak Output Power
ACLR (LTE 1FA 10MHZ)
@ Po=47.2dBm
RF Gain @ 25℃
Gain Flatness
Input Return Loss
Output Return Loss
Normal Operating Voltage
Current Consumption
@ Po=47.2dBm
Efficiency
Symbol
BW
OBW
Pout
Psat
ACLR
G
ΔG
S11
S22
VDC
IDD
Eff
Specification
728~842.5MHz
114.5MHz
47.2dBm(52.5W) Avg. @ LTE 1FA 10MHz
54 dBm (Min. Duty Cycle 10% Pulse)
Pre-DPD
Post-DPD
-27dBc(Min)
@±10MHz
-50dBc(Min)
@±10MHz
@-30 ~ +60°C
@45V
@CFR 6.5dB
55dB (Min.)
3.0 dB(Peak to peak) @ Operating Frequency
-12dB (Max.)
-12dB (Max.)
V1= +5.6V, V2= +45V
0.3A @ 5.6V (Max.)
3.1A / 45V (Typ.)
38% @ 45V (Typ.)
Feedback Output level @ 47.2dBm
FB
+8dBm ± 2dB
Temp Detector
T
0.9V @ 40℃
▪ Tel : 82-31-250-5078
▪ rfsales@rfhic.com
▪ All specifications may change without notice.
▪ Version 1.0