RTH08003-20D Datasheet, PDF (1/6 Pages) RFHIC – GaN Doherty Hybrid Amplifier

GaN Doherty Hybrid Amplifier RTH08003-20D
Product Features
• GaN on SiC Chip on Board
• Surface Mount Hybrid Type
• 2-Stage Doherty Amplifier
• High Efficiency
• No Matching circuit needed
Applications
• RF Sub-Systems
• Base Station
• RRH
•4G/ LTE system
• Small cell
Description
Package Type : SP-1E
Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH08003-20D amplifier fabricated using an advanced high power
density Gallium Nitride (GaN) semiconductor process.
Electrical Specifications @ Vds1=5V, Vds2=30V, Ta=25℃
PARAMETER
Frequency Range
Power Gain
Gain Flatness
Input Return Loss
Pout @ Average
UNIT
MHz
dB
dBm
MIN
860
27
-1.5
-
-
TYP
867.5
30
-
-15
35.5
MAX
875
-
+1.5
-9
-
Pout @ Saturation
dBm
43
43.5
-
ACLR @ BW 10MHz
-
LTE (PAPR 7.5dB)
dBc
-
-28
-25
-53
-
Doherty Efficiency
-
50
-
%
Total Efficiency
39
43
-
Drive Amp. Idq
-
180
-
Carrier Amp. Idq
mA
-
120
-
Peaking Amp. Idq
-
0
-
-4.9
-4.5
-3.0
-4.9
-2.8
-2.0
Supply Voltage
V
-
5.0
-
-
30
-
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on  Turn on the Gate voltage supply and last turn on the Drain voltage supplies
Turn off  Turn off the Drain voltage and last turn off the Gate voltage
Note
1. ACLR Measured Pout=35.5dBm @ fc± 10MHz / 9.015MHz
LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF
CONDITION
ZS = ZL = 50 ohm
-
3.548W
Pulse Width=20us,
Duty cycle 10%
Non DPD
With DPD
Tc=25℃
-
Inverted Doherty
Vgc
Vgp
Vds1
Vds2
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
㎜
TYPICAL
6.0
32 x 20 x 4.2
RATING
±1.0
±0.15
Korean Facilities : 82-31-8069-3036 / [e-mail]
US Facilities : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 3.0