RT550PD_14 Datasheet, PDF (1/3 Pages) RFHIC – Power Transistor

Power Transistor
Product Features
• High Output Power
P1dB = 40dBm(typ)@2.3GHz
• High Efficiency
• High Power Gain
G1dB = 10dB(typ) @2.3GHz
• High Linearity
• Hermetically sealed package
• Competitive Price
RT550PD
Applications
• Repeater
• RF Sub-Systems
• Base Station
• Converter
• MMDS
Description
The RT550PD is designed for base stations and cell extenders as 300 ~ 3000MHz.
Package Type : WP-22
Absolute Maximum Ratings
PARAMETER
Drain to Source Voltage
Gate to Source Voltage Range
Power Dissipation
Storage Temperature
Channel Temperature
UNIT
V
V
W
℃
℃
RATING
12
-5~0
37
-65 ~ +200
175
SYMBOL
Vds
Vgs
Pt
Tstg
Tch
Environmental Characteristics @ Ta=+25℃
PARAMETER
Saturated Drain Current
Transconductance
Pinch-off Voltage
Breakdown Voltage Gate-Source
Breakdown Voltage Gate-Drain
Output Power @ 1dB G.C.P
Linear Power Gain
Power added efficiency @ 1dB
Thermal Resistance
UNIT
mA
mS
V
V
V
dBm
dB
%
℃/W
MIN
5000
-
-1.6
-20
-20
39
-
-
-
TYP
-
3300
-1.9
-
-
40
10
40
4.0
MAX
6700
-
-3.5
-25
-25
-
-
-
4.5
SYMBOL
Idss
gm
Vp
Bvgs
Bvgd
P1dB
GLP
ηadd
Rth
CONDITION
Vds=3V, Vgs=0V
Vds=3V, Ids=3600mA
Vds=3v, Ids=360mA
-
-
Vds=9V, Id=2.4A
F=2.3GHz
-
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 5.2