RT550PD Datasheet, PDF (1/2 Pages) RFHIC – Power Transistor

Power Transistor RT550PD
Product Features
• High Output Power
P1dB = 40dBm(typ)@2.3GHz
• High Efficiency
• High Power Gain
G1dB = 10dB(typ) @2.3GHz
• High Linearity
• Hermetically sealed package
• Competitive Price
Application
• Repeater
• RF Sub-Systems
• Base Station
• Converter
• MMDS
Package Type : WP-22
Description
The RT550PD is designed for base stations and cell extenders as 300MHz ~ 3GHz.
Absolute Maximum Ratings
Parameter
Drain - Source Voltage
Gate - Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
Vds
Vgs
Pt
Tstg
Tch
Rating
+12
-5V~0V
37
-65 ~ +200
175
Unit
V
V
W
℃
℃
Electrical Characteristics (Ta=+25℃)
Parameter
Symbol Test Conditions Min Typ Max Unit
Saturated Drain Current
Transconductance
Pinch-off Voltage
Breakdown Voltage Gate-Source
Breakdown Voltage Gate-Drain
Output Power @ 1dB G.C.P
Linear Power Gain
Power added efficiency @ 1dB
Thermal Resistance (Channel to Case)
Idss
gm
Vp
Bvgs
Bvgd
P1dB
GLP
ηadd
Rth
Vds=3V, Vgs=0V 5000
Vds=3V, Ids=3600mA
Vds=3v, Ids=360mA -1.6
-20
-20
39
Vds=9V, Id=2.4A
F=2.3GHz
3300
-1.9
40
10
40
4.0
6700
-3.5
-25
-25
4.5
mA
mS
V
V
V
dBm
dB
%
℃/W
▪ Tel : [phone]
▪ [e-mail]
▪ All specifications may change without notice.
▪ Version 5.2