RT230PD_14 Datasheet, PDF (1/32 Pages) RFHIC – Power Transistor

Power Transistor
Product Features
• 50 ~ 4000 MHz
• 18dB Gain@900MHz
• 34.5dBm P1dB@900MHz
• 47dBm Output IP3
• GaAs HFET
RT230PD
Applications
• CDMA,W-CDMA Medium Power Amplifier
• High Linearity Drive Amplifier
• ISM
• MMDS
• Wi-Fi, Wi-Max
Package Type : SP-12
Description
The RT230PD is designed for base stations and cell extenders and operating frequency range is from 50 ~ 4000MHz.
RT230PD is GaAs HFET in SP-12 type package which has superior performance against the heat at high temperature for its high
reliability. It also has high efficiency, high gain and has a strong advantage using it as drive device at high frequency.
RT230PD is 100% RF&DC tested.
Electrical Specifications
PARAMETER
UNIT
Frequency Range
MHz
900
Gain
dB
18
Input Return Loss
dB
-15
Output IP3
dBm
47
1dB Compression Point
dBm
34.5
Channel Power
dBm
27.5
Noise Figure
dB
2.5
DC Current
mA
450
Supply Voltage
VDC
9
* Test Conditions : (Vd = +9V, Id = 450mA, Ta=+25℃ )
* OIP3 is measured with two tones, at an output power of 20dBm/tone separated by 1MHz
TYPICAL
1900
16.5
-20
47
34.5
25.5
2.5
450
9
Absolute Maximum Ratings
PARAMETER
Drain to Source Voltage
Gate to Source Voltage Range
Power Dissipation
Storage Temperature
Channel Temperature
UNIT
V
V
W
℃
℃
RATING
12
0 ~ -5.0
7.5
-65 ~ 175
175
2600
14.5
-20
47
34
-
3.0
450
9
SYMBOL
Vds
Vgs
Pt
Tstg
Tch
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 5.2