RT230PD Datasheet, PDF (1/22 Pages) RFHIC – Power Transistor

Power Transistor RT230PD
Product Features
• 50 ~ 4000 MHz
• 18dB Gain@900MHz
• 34.5dBm P1dB@900MHz
• 47dBm Output IP3
• GaAs HFET
Application
• CDMA,W-CDMA Medium
Power Amplifier
• High Linearity Drive Amplifier
• ISM
• MMDS
• Wi-Fi, Wi-Max
Package : SP-12
Description
The RT230PD is designed for base stations and cell extenders and operating frequency range is from 50MHz to 4GHz.
RT230PD is GaAs HFET in SP-12 type package which has superior performance against the heat at high temperature
for its high reliability. It also has high efficiency, high gain and has a strong advantage using it as drive device at high
frequency.
RT230PD is 100% RF&DC tested.
Absolute Maximum Ratings
Parameter
Drain to Source Voltage
Gate to Source Voltage Range
Power Dissipation
Storage Temperature
Channel Temperature
Symbol
Vds
Vgs
Pt
Tstg
Tch
Rating
+12
0 to -5.0
7.5
-65 to +175
+175
Unit
V
V
W
℃
℃
Electrical Characteristics
Parameter
Symbol Min
Typ
Max
Unit
Saturated Drain Current
Idss
1100
mA
Transconductance
gm
-
790
mS
Pinch-off Voltage
Vp
-1
-1.8
-3
V
Breakdown Voltage Gate-Source
Bvgs
-18
-25
V
Breakdown Voltage Gate-Drain
Bvgd
-18
-25
V
Output Power @ 1dB G.C.P
P1dB
34
34.5
dBm
Power Gain @ 1dB G.C.P
G1dB
14.5
dB
Power added efficiency
ηadd
50
%
Thermal Resistance
Rth
18
20
℃/W
* Test Conditions : V_d=9V, I_d=450mA, Ta=+25℃, Frequency=2.3GHz
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▪ All specifications may change without notice.
▪ Version 5.2