RNP21040-50 Datasheet, PDF (1/5 Pages) RFHIC – Narrowband Power Amplifier

Narrowband Power Amplifier
RNP21040-50
Product Features
• GaN on SiC Narrowband High Power Amplifier
• 2100 ~ 2170MHz Operation Bandwidth
• 50W Typical P3dB
• 50% typical Power Efficiency at P3dB
Applications
• General Purpose
Description
The power amplifier module is designed for general purpose.
Operating frequency range is from 21100 ~ 2170 MHz.
Gallium Nitride on SiC technology is used and attached on an aluminum sub carrier.
Full in/out matching is already applied.
Improved thermal handling by patented technology.
Electrical Specifications @ Tcc=28℃; T=25℃; Z_S=Z_L=50Ω
PARAMETER
Bandwidth
UNIT
MHz
MIN
2110
TYP
-
Power Gain
dB
32
33
Gain Flatness
dBpp
-
±1
Gain Variation vs Temperature
dB
-
±1
Output Power
dBm
46
47
Power Added Efficiency
%
45
50
Output Power
dBm
47
47.5
Power Added Efficiency
%
47
52
Input Return Loss
dB
-
-10
Supply Voltage
V
27.5
28
Quiescent Current consumption
A
-
0.5
On/Off Switching Time
uS
-
2
Shut Down or Switch On/Off
0
-
TTL Voltage
V
2.5
5
Package Type : DP-75
MAX
2170
-
±1.5
±2
-
-
-
-
-6
30
0.6
5
0.5
5.5
CONDITION
-
@ Pin=14dBm
@ Pin=14dBm
-20°C to 60°C,
@ Pin=14dBm
@ Pin=14dBm
@ Pin=14dBm
@ P3dB
@ P3dB
@Pin=10dBm
Vcc(=Vds)
-
On : TTL "Low"
On : TTL "Low"
On : TTL "Low"
On : TTL "Low"
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 1.0