RNP04006-A1 Datasheet, PDF (1/6 Pages) RFHIC – Power Amplifier

Power Amplifier
Product Features
• Surface Mount Hybrid Type
• No matching circuit needed
• High Efficiency
• High Linearity
• Psat 4W Power
• Alumina Substrate
• GaN on SiC Chip on board
RNP04006-A1
Applications
• RF Sub-Systems
• Base Station
Package Type : HY-6
Description
GaN on SiC is used and attached on a board. It is connected by using bias and in/out matching circuit method with gold wire bonding.
Electrical Specifications @ Ta=25℃
PARAMETER
UNIT
MIN
TYP
MAX
Frequency Range
MHz
400
-
450
Power Gain
dB
32
33
-
Input Return Loss
dB
-
-10
-6
Output Power
dBm
35.5
36
-
Efficiency
%
65
70
-
N^TH Harmonic suppression
dBc
10
15
-
Total Current
Drive
mA
-
90
-
consumption
Main
-
230
-
Weight
g
-
-
2
-
4
-
Supply Voltage
V
-
-3.2
-
-
24
-
Dimensions (W×L×H)
mm
20 × 14.5 × 4.8
* Caution : The drain voltage must be supplied to the device after the gate voltage is supplied.
CONDITION
ZS = ZL = 50 ohm
@ Input 3 dBm
-
@ Input 3 dBm
-
-
Drive Amp
Gate Bias
Main Bias
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 1.0