RNC16010-10 Datasheet, PDF (1/6 Pages) RFHIC – GaN Hybrid Power Amplifier

Preliminary
GaN Hybrid Power Amplifier RNC16010-10
Product Features
• GaN on SiC HEMT
• In/Out Impedance Matching
• Surface Mount Hybrid Type
• Small Size & Mass
• High Efficiency
• Low Cost
• Custom design available
Applications
• Satellite Communication System
Package Type : NP-1E
Description
The RNC16010-10 is designed for Satellite communication system application frequencies from 1615 ~ 1675MHz.
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency.
High In/Output impedance, high power density.
Electrical Specifications @ Vds =32V, Ta=25℃
PARAMETER
UNIT
MIN
TYP
Frequency Range
MHz
1615
-
Power Gain
-
25
Gain Flatness
dB
-
±1
Input Return Loss
-
-10
Pout @ Psat
dBm
-
40
PAE
%
-
45
Ids
A
-
1.2
V
-
+5
Supply Voltage
V
-V
V
-
32
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
HM Series have internal DC blocking capacitors at the RF input and output ports
MAX
1675
-
-
-
-
-
-
-
-
CONDITION
ZS = ZL = 50 ohm
Amp : Idq1 = 300mA
Idq2 = 100mA
Drive Bias(Vdd)
Gate Bias (Vgs1)
Main Bias(Vds)
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
㎜
TYP
2
20.5 x 15 x 4.8
REMARK
-
-
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facilities : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 0.4