RFT1950-08 Datasheet, PDF (1/3 Pages) RFHIC – Power Amplifier

Power Amplifier
RFT1950-08
Product Features
• Small size by using simple matching circuit board
• Single Supply Voltage
• Heat sink 99.9% copper, gold plated
• High Productivity
• Low Manufacturing Cost
• GaAs HFET
Application
• UMTS Repeater
• RF Sub-Systems
• Base Station
Description
The power amplifier module is designed for base stations and cell extenders and
operating frequency range is from 1.9GHz to 3.5GHz
GaAs HFET is used and attached on a copper sub carrier. It is connected by
using bias and in/out matching circuit method with gold wire bonding.
The bias and matching circuit are designed much simpler than other circuits for silicon IC’s, LDMOS because
GaAs HFET is operated by low supply voltage whereas others are operated by high supply voltage.
For better thermal conductivity, enhanced mode PCB was used in the 99.9% copper gold plate heat sink.
This simplicity results cost competitiveness and performance enhancement.
Specifications
Package : DP-56
PARAMETER
RFT1950-08
Frequency Range (MHz)
Small Signal Gain (dB)
Gain Flatness (Max.)
Intput Return Loss
Output P1dB
W-CDMA Power (1 FA)
Output IP3
Noise Figure (Typ.)
Drain Voltage
Drain Current
DimenOspioernastinignTmemmp Range
Dimensions (W×L×H)
1920 ~ 1980
27
± 1dB @ 50MHz BW
-10dB
38 dBm
30dBm @ -45dBc ACLR
51dBm @ tone / 25dBm
4 dB
9V
1.5A
Fun-c2t0i°oCn~a+l 7D0°iCagram
32.0 × 44.0 × 10.0 [mm]
NOTE
*Test condition: 1950MHz, 3GPP W-CDMA signal modulation
Test Model 1, 64DPCH, 3.84MHz BW, ±5MHz offset
* RFT Series : Internally Matched Module
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▪ All specifications may change without notice.
▪ Version 1.0