RFM1950-10 Datasheet, PDF (1/3 Pages) RFHIC – Power Amplifier

Power Amplifier
RFM1950-10
Product Features
• Small size by using simple matching circuit board
• High Efficiency
• Single Supply Voltage
• High Linearity, 10W Power
• Heat sink 99.9% copper, gold plate
• High Productivity
• Low Manufacturing Cost
• GaAs MESFET
Application
• USPCS Repeater
• RF Sub-Systems
• Base Station
Description
The power amplifier module is designed for base stations and cell extenders
as cellular and GSM , IMT-2000, ISM, MMDS frequency systems.
GaAs MESFET is used and attached on a copper sub carrier. It is connected by
using bias and in/out matching circuit method with gold wire bonding.
The bias and matching circuit are designed much simpler than other circuits for silicon IC’s, LDMOS because
GaAs MESFET is operated by low supply voltage whereas others are operated by high supply voltage.
For better thermal conductivity, enhanced mode PCB was used in the 99.9% copper gold plate heat sink.
This simplicity results cost competitiveness and performance enhancement.
Specifications
Package : DP-36
PARAMETER
Min
Typ
Frequency Range (MHz)
1920 ~ 1980
Small Signal Gain (dB)
12
Gain Flatness (Max.)
± 0.5dB @ 50MHz BW
Gain Variation Over Temp
VSWR (Input)
Output P1dB
37 dBm
± 0.5dB
2:1
38 dBm
CDMA Power (1 FA)
Vcc / Idc (CDMA Only)
31 dBm
9V / 1.2A
OIP3 @ tone / 27 dBm
Noise Figure (Typ.)
Shut Down (On/Off)
49 dBm
50 dBm
5 dB
＋5V @ 25㎂ / 0V
In/Out Connectors
Dimensions in mm
Operating Temp Range
Dimensions (W×L×H)
SMA Female (50 Ω)
Functional Diagram
-20°C ~ +70°C
29.0 × 30.2 × 9.0 [mm] (RFM)
48.0 × 54.2 × 22.0 [mm] (RFH)
NOTE
* CDMA : 1.25MHz symbol rate ; Forward Link ; 9 Channels, Multi tone Available
@ ±885KHz offset in 30KHz resolution bandwidth
@ ±1.98MHz offset in 30KHz resolution bandwidth
* RFM : Internally Matched Module
* RFH : Housing Type
: RF Connector
: SMA Female
Max
± 1.0dB
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▪ All specifications may change without notice.
▪ Version 5.3