RFA1765-03 Datasheet, PDF (1/3 Pages) RFHIC – Power Amplifier

Power Amplifier
RFA1765-03
Product Features
• Small size by using simple matching circuit board
• Single Supply Voltage
• Heat sink 99.9% copper, gold plated
• High Productivity
• Low Manufacturing Cost
• GaAs HFET
Application
• PCS Repeater
• RF Sub-Systems
• Base Station
Description
Package : DP-36
The power amplifier module is designed for base stations and cell extenders and
operating frequency range is from 300MHz to 2.3GHz
GaAs HFET is used and attached on a copper sub carrier. It is connected by
using bias and in/out matching circuit method with gold wire bonding.
The bias and matching circuit are designed much simpler than other circuits for silicon IC’s, LDMOS because
GaAs HFET is operated by low supply voltage whereas others are operated by high supply voltage.
For better thermal conductivity, enhanced mode PCB was used in the 99.9% copper gold plate heat sink.
This simplicity results cost competitiveness and performance enhancement.
Specifications
PARAMETER
RFA1765-03
Frequency Range (MHz)
Small Signal Gain (dB)
Gain Flatness (Max.)
Gain Variation Over Temp
VSWR (Input)
Output P1dB
CDMA Power (1 FA)
CDMA Power (14 FA)
OIP3 @ tone / 23 dBm
Noise Figure (Typ.)
Drain Voltage
Dimension_Ds_rain_in m_Cum_rrent
Operating Temp Range
Dimensions (W×L×H)
34 dBm (Min.)
48 dBm (Min.)
1750 ~ 1780
26
± 0.5dB @ 50MHz BW
± 0.7dB (Typ.)
2:1
35 dBm (Typ.)
29dBm @ -45dBc ACPR
25dBm @ -45dBc ACPR
49 dBm (Typ.)
3.0 dB
9V
Functio₁n_.0a_Al Diagram
-20°C ~ +70°C
29.0 × 30.2 × 10.1 [mm]
NOTE
* CDMA : 1.25MHz symbol rate ; Forward Link ; 9 Channels, Multi tone Available
@ ±885KHz and ±1.98MHz offset in 30KHz resolution bandwidth
* Operation Bandwidth : 50MHz
* RFA Series : Internally Matched Module
± 1.5dB(Max.)
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▪ All specifications may change without notice.
▪ Version 5.4