HT2627-15A Datasheet, PDF (1/7 Pages) RFHIC – GaN Hybrid Power Amplifier

GaN Hybrid Power Amplifier HT2627-15A
Product Features
• GaN on SiC HEMT
• 2-Stage Amplifier 50ohms Matching
• Surface Mount Hybrid Type
• Small Size & Mass
• High Efficiency
Applications
• RF Sub-Systems
• Base Station
• Repeater
• 4G/LTE system
• Small cell
Package Type : NP-1EL
Description
The HT2627-15A is designed for LTE Repeater & RF Sub-systems application frequencies from 2650 ~ 2750MHz
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance,
High power density.
Electrical Specifications @ Vds =28V, Ta=25℃
PARAMETER
Frequency Range
Power Gain
Gain Flatness
Input Return Loss
Pout @ Average
Pout @ Psat
ACLR* @ BW 10MHz
LTE (PAPR 7.5dB)
Drain Efficiency
Total Ids
UNIT
MHz
dB
dBm
dBm
dBc
%
mA
MIN
2650
25
-
-
33
41
-
-
28
-
TYP
-
27
1.0
-8.0
36
42
-33
-
31
450
MAX
2750
30
2.0
-6.0
-
-
-27
-
-
-
V
-
Supply Voltage
V
-
-2.5
-2.0
28
-
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
1. ACLR Measured Pout=33dBm @ fc± 10MHz / 9.015MHz
LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180)
2. HT Series have internal DC blocking capacitors at the RF input and output ports
CONDITION
ZS = ZL = 50 ohm
Amp : Idq1 = 50mA
Idq2 = 125mA
LTE=33dBm, CW=36dBm
Pulse Width=20us, Duty16%
Non DPD
With DPD
Pout= 36dBm(CW)
Gate Bias (Vgs1 and
Vgs2)
Main Bias(Vds)
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
㎜
TYP
2
20.5 x 15 x 3.5
REMARK
-
-
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
1/7
All specifications may change without notice
Version 1.0