HT2121-15A Datasheet, PDF (1/7 Pages) RFHIC – HT2121-15A

Preliminary
GaN Hybrid Power Amplifier HT2121-15A
Product Features
• GaN on SiC HEMT
• In/Out Impedance Matching
• Surface Mount Hybrid Type
• Small Size & Mass
• High Efficiency
• Low Cost
• 2W Average Output Power
Applications
• RF Sub-Systems
• Base Station
• Repeater
• LTE system
Package Type : NP-1E
Description
The HT2121-15A is designed for LTE Repeater & RF Sub-systems application frequencies from 2110 ~ 2170MHz
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance,
High power density.
Electrical Specifications @ Vds =28V, Ta=25℃
PARAMETER
UNIT
MIN
TYP
Frequency Range
MHz
2110
-
Power Gain
31.5
33
Gain Flatness
dB
-
0.8
Input Return Loss
-6
-10
Pout @ Average
dBm
-
33
Pout @ Psat
dBm
40.5
42
ACLR* @ BW 10MHz
-
-36
dBc
LTE (PAPR 7.5dB)
-
-55
Drain Efficiency
%
-
24.5
Ids
mA
-
290
V
-
-3.0
Supply Voltage
V
-
28
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
1. ACLR Measured Pout=33dBm @ fc± 10MHz / 9.015MHz
LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF
2. HT Series have internal DC blocking capacitors at the RF input and output ports
MAX
2170
34.5
-
-
-
-
-33
-
-
-
-2.0
-
CONDITION
ZS = ZL = 50 ohm
Amp : Idq1 = 47mA
Idq2 = 103mA
Pulse Width=20us, Duty10%
Non DPD
With DPD
Pout @ Average
Gate Bias (Vgs1 and Vgs2)
Main Bias(Vds)
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
㎜
TYP
2
20.5 x 15 x 4.8
REMARK
-
-
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facilities : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 0.4