HT1818-15M Datasheet, PDF (1/8 Pages) RFHIC – GaN Hybrid Power Amplifier

Preliminary
GaN Hybrid Power Amplifier HT1818-15M
Product Features
• E-pHEMT GaAs + GaN on SiC
• 2-Stage Amplifier 50ohms Matching
• Surface Mount Hybrid Type
• Small Size & Mass
• High Efficiency
Applications
• RF Sub-Systems
• Base Station
• Repeater
• 4G/LTE system
• Small cell
Package Type : NP-1EL
Description
The HT1818-15M is designed for LTE Repeater & RF Sub-systems application frequencies from 1805 to 1880MHz
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance,
High power density.
Electrical Specifications @ Vds1 =5V, Vds2 =28V, Ta=25℃
PARAMETER
UNIT
MIN
TYP
MAX
Frequency Range
MHz
1805
-
1880
Power Gain
-
34
-
Gain Flatness
dB
-
0.8
1.5
Input Return Loss
-
-9
-6
Pout @ Average
dBm
-
33
-
Pout @ Psat
dBm
40.5
41.5
-
ACLR @ BW 10MHz
dBc
-
LTE (PAPR 7.5dB)
-
-39
-30
-54
-
Drain Efficiency
%
-
27
-
Ids1
-
140
-
mA
Ids2
-
240
-
-
5
-
Supply Voltage
V
-
-3.0
-2.0
-
28
-
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn on the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
1. ACLR Measured Pout=33dBm @ fc± 10MHz / 9.015MHz
LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180)
2. HT Series have internal DC blocking capacitors at the RF input and output ports
CONDITION
ZS = ZL = 50 ohm
Amp1 : Idq1 = 140mA
Amp2 : Idq2 = 105mA
Pulse Width=20us, Duty10%
Non DPD
With DPD
Pout @ Average
Drive Amp. (Vds1)
Gate Bias (Vgs2)
Main Bias (Vds2)
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
㎜
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facilities : 919-677-8780 / [e-mail]
TYP
2
20.5 x 15 x 3.5
1/8
REMARK
-
-
All specifications may change without notice
Version 0.1