HT1818-15A Datasheet, PDF (1/8 Pages) RFHIC – GaN Hybrid Power Amplifier

GaN Hybrid Power Amplifier HT1818-15A
Product Features
• GaN on SiC HEMT
• 2-Stage Amplifier 50ohms Matching
• Surface Mount Hybrid Type
• Small Size & Mass
• High Efficiency
Applications
• RF Sub-Systems
• Base Station
• Repeater
• 4G/LTE system
• Small cell
Package Type : NP-1EL
Description
The HT1818-15A is designed for LTE Repeater & RF Sub-systems application frequencies from 1805 ~ 1880MHz
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency. High In/Output impedance,
High power density.
Electrical Specifications @ Vds =28V, Ta=25℃
PARAMETER
UNIT
MIN
TYP
MAX
Frequency Range
MHz
1805
-
1880
Power Gain
30
33
35
Gain Flatness
dB
-
0.7
-
Input Return Loss
-
-9.0
-5.0
Pout @ Average
dBm
-
33
-
Pout @ Psat
dBm
40.8
42
-
ACLR* @ BW 10MHz
-
LTE (PAPR 7.5dB)
dBc
-
-39
-30
-54
-
Drain Efficiency
%
22
25
-
Ids
mA
-
290
-
V
Supply Voltage
V
-
-3.0
-2.0
28
-
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
1. ACLR Measured Pout=33dBm @ fc± 10MHz / 9.015MHz
LTE 10MHz 1FA PAPR=7.5dB @ 0.01% probability on CCDF, (DPD Engine: Optichron OP6180)
2. HT Series have internal DC blocking capacitors at the RF input and output ports
CONDITION
ZS = ZL = 50 ohm
Amp : Idq1 = 50mA
Idq2 = 105mA
Pulse Width=20us, Duty10%
Non DPD
With DPD
Pout @ Average
Gate Bias (Vgs1 and Vgs2)
Main Bias(Vds)
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
㎜
TYP
2
20.5 x 15 x 3.5
REMARK
-
-
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 1.0