HS7785-20A Datasheet, PDF (1/6 Pages) RFHIC – GaN Hybrid Power Amplifier

Preliminary
GaN Hybrid Power Amplifier
HS7785-20A
Product Features
• GaN on SiC HEMT
• In/Out Impedance Matching
• Surface Mount Hybrid Type
• Small Size & Mass
• High Efficiency
• Low Cost
Applications
• Point to Point
• Radio system
Package Type : NP-18
Description
The HS7785-20A is designed for Radio system application frequencies from 7700MHz to 8500MHz.
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency.
High In/Output impedance, high power density.
Electrical Specifications ; Vgs@Idq=150mA, Vds =40V, Ta=25℃, 50ohm System
PARAMETER
Operating Frequency
Operating Bandwidth
Input Return Loss
Output Pulse Power @ P4dB
Input Pulse Power
Power Gain @ P4dB
Gain Flatness
Efficiency
UNIT
MHz
MHz
dB
dBm
dBm
dB
dB
%
MIN
7700
-
-
-
-
-
-
-
TYP
-
800
-6
44
35
9
1.5
35
MAX
8500
-
-
-
-
-
-
-
IMD
dBc
-
30
-
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
HS Series have internal DC blocking capacitors at the RF input and output ports
*S.C.L : Single Carrier Level
CONDITION
ZS = ZL = 50ohm
-
-
Pulse Width =100us
Duty cycle = 10%
Δf=1MHz, IM3 test
@Pout=33dBm (*S.C.L)
Idq=50mA
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 0.3