HS5758-10A Datasheet, PDF (1/6 Pages) RFHIC – GaN Hybrid Power Amplifier

Preliminary
GaN Hybrid Power Amplifier HS5758-10A
Product Features
• GaN on SiC HEMT
• In/Out Impedance Matching
• Surface Mount Hybrid Type
• Small Size & Mass
• High Efficiency
• Low Cost
• Custom design available
Applications
• Fixed Wireless, Wimax
• ISM Band
Package Type : NP-26
Description
The HS5758-10A is designed for 802.16 WiMAX system application frequencies from 5725 ~ 5875MHz.
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency.
High In/Output impedance, High power Density.
Electrical Specifications @ Vds =28V, Ta=25°C
PARAMETER
UNIT
MIN
TYP
Frequency Range
MHz
5725
-
Power Gain
-
18.5
Gain Flatness
dB
-
±1
Input Return Loss
-
-
dBm
-
41
Pout
dBm
-
32
Drain Efficiency
%
-
45
-
50
Idq
mA
-
120
Ids
mA
-
-
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
MAX
5875
-
-
-5
-
-
-
-
-
1200
Note
802.16 OFDM, 3.5MHz Channel BW, 64QAM, 5mS Burst, Symbol Length of 59, PAR 9.8 @ 0.01%
CONDITION
ZS = ZL = 50 ohm
-
-
-
Out power at Sat
Out power at 3% EVM
-
Quiescent
Idq1
Current
Idq2
Saturated Current
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
㎜
TYP
2
20.5 x 15 x 4.8
REMARK
-
-
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 0.2