HS139142-18A Datasheet, PDF (1/6 Pages) RFHIC – GaN Hybrid Power Amplifier

Preliminary
GaN Hybrid Power Amplifier HS139142-18A
Product Features
• GaN on SiC HEMT
• In/Out Impedance Matching
• Surface Mount Hybrid Type
• Small Size & Mass
• High Efficiency
• Low Cost
Applications
• Point to Point
• Radio system
Package Type : NP-18
Description
The HS139142-18A is designed for Radio system application frequencies from 13900 ~ 14200MHz.
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency.
High In/Output impedance, high power density.
Electrical Specifications @ Vgs,Idq=150mA, Vds =40V, Ta=25℃, 50ohm System
PARAMETER
UNIT
MIN
TYP
Operating Frequency
MHz
13900
-
Operating Bandwidth
MHz
-
300
Input Return Loss
dB
-
-10
Output Pulse Power @ P3dB
dBm
-
42.5
Input Pulse Power
dBm
-
36.5
Power Gain @ P3dB
dB
-
6
Gain Flatness
dB
-
1.5
IMD
dBc
-
30
Duty Cycle
%
-
10
Pulse Width
us
-
100
Efficiency
%
-
35
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
HS Series have internal DC blocking capacitors at the RF input and output ports
MAX
14200
-
-
-
-
-
-
-
-
-
-
CONDITION
ZS = ZL = 50ohm
-
-
Pulse Width
=100us, 10%Duty
30dBm@2tone
-
-
-
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 0.2