HS109119-5A Datasheet, PDF (1/6 Pages) RFHIC – GaN Hybrid Power Amplifier

Preliminary
GaN Hybrid Power Amplifier HS109119-5A
Product Features
• GaN on SiC HEMT
• In/Out Impedance Matching
• Surface Mount Hybrid Type
• Small Size & Mass
• High Efficiency
• Low Cost
Applications
• Point to Point
• Radio system
Package Type : NP-18
Description
The HS109119-5A is designed for Radio system application frequencies from 10900MHz to 11900MHz.
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency.
High In/Output impedance, high power density.
Electrical Specifications @ Vgs@Idq=80mA, Vds =40V, Ta=25℃, 50ohm System
PARAMETER
UNIT
MIN
TYP
Operating Frequency
Operating Bandwidth
MHz
MHz
10900
-
-
1000
Input Return Loss
dB
-
-9
Output Pulse Power @ P3dB
dBm
-
37
Input Pulse Power
dBm
-
30
Power Gain @ P3dB
dB
-
7
Gain Flatness
dB
-
1
Efficiency
%
-
30
OIP3
dBm
-
41
IMD
dBc
-
25
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
HS Series have internal DC blocking capacitors at the RF input and output ports
MAX
11900
-
-
-
-
-
-
-
-
-
CONDITION
ZS = ZL = 50ohm
-
-
Pulse width = 100us
Duty cycle = 10%
Continuous Wave
28dBm@2tone
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 0.3