HS107117-20A Datasheet, PDF (1/7 Pages) RFHIC – GaN Hybrid Power Amplifier

Preliminary
GaN Hybrid Power Amplifier HS107117-20A
Product Features
• GaN on SiC HEMT
• In/Out Impedance Matching
• Surface Mount Hybrid Type
• Small Size & Mass
• High Efficiency
• Low Cost
Applications
• Point to Point
• Radio system
Package Type : NP-18
Description
The HS107117-20A is designed for Radio system application frequencies from 10700 ~ 11700MHz.
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency.
High In/Output impedance, high power density.
Electrical Specifications @ Vgs,Idq=150mA, Vds =40V, Ta=25℃, 50ohm System
PARAMETER
UNIT
MIN
TYP
Operating Frequency
MHz
10700
-
Operating Bandwidth
MHz
-
800
Input Return Loss
dB
-
-10
Output Pulse Power @ P4dB
dBm
-
43
Input Pulse Power
dBm
-
35
Power Gain @ P4dB
dB
-
8
Gain Flatness
dB
-
1
IMD @ 33dBm 2tone
dBc
-
35
2^nd HB @ 40dBm 1tone
dBc
-
35
Duty Cycle
%
-
10
Pulse Width
us
-
100
Efficiency
%
-
40
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
HS Series have internal DC blocking capacitors at the RF input and output ports
MAX
11700
-
-
-
-
-
-
-
-
-
-
-
CONDITION
ZS = ZL = 50ohm
-
-
Pulse Width
=100us, 10%Duty
Continuous Wave
(Idq = 50mA)
-
-
-
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 0.3