HM2060-10A Datasheet, PDF (1/7 Pages) RFHIC – GaN Hybrid Power Amplifier

Preliminary
GaN Hybrid Power Amplifier HM2060-10A
Product Features
• GaN on SiC HEMT
• In/Out Impedance Matching
• Small Size & Mass
• High Efficiency
• Low Cost
• Custom design available
Applications
• Radio System
Description
The HM2060-10A is designed for Radio system application frequencies from 2000 ~ 6000MHz.
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency.
High In/Output impedance, high power density.
Electrical Specifications @ Vds =32V, Ta=25℃
PARAMETER
Frequency Range
Power Gain
Power Gain Flatness
Input Return Loss
Pout @ Psat
Drain Efficiency
Ids
UNIT
MHz
dB
dBm
%
A
MIN
2000
-
-
-
39.5
-
-
TYP
-
16
±2
-3.5
40
25
1.4
V
-3.0
Supply Voltage
V
-
32
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
HM Series have internal DC blocking capacitors at the RF input and output ports
MAX
6000
-
-
-
-
-
-
-2
-
Package Type : NP-1EL
CONDITION
ZS = ZL = 50 ohm
Input Power = 24dBm
Amp : Idq1 = 100mA
Idq2 = 150mA
Gate Bias (Vgs1 and
Vgs2)
Main Bias(Vds)
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
㎜
TYP
2
20.5 x 15 x 3.5
REMARK
-
-
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
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All specifications may change without notice
Version 0.3