HM0525-10A Datasheet, PDF (1/7 Pages) RFHIC – GaN Hybrid Power Amplifier

GaN Hybrid Power Amplifier HM0525-10A
Product Features
• GaN on SiC HEMT
• In/Out Impedance Matching
• Surface Mount Hybrid Type
• Small Size & Mass
• High Efficiency
• Low Cost
• Custom design available
Applications
• Radio System
Description
The HM0525-10A is designed for Radio system application frequencies from 500 ~ 2500MHz.
This amplifier uses GaN HEMT technology which performs high breakdown voltage, high efficiency.
High In/Output impedance, high power density.
Package Type : NP-1E
Electrical Specifications @ Vds =28V, Ta=25℃
PARAMETER
UNIT
MIN
TYP
Frequency Range
MHz
500
-
Power Gain
-
20
Gain Flatness
dB
-
±1
Input Return Loss
-
-
Pout @ Psat
dBm
39
40
PAE
%
20
30
Ids
mA
-
-
V
-3.5
-3
Supply Voltage
V
-
28
Caution
The drain voltage must be supplied to the device after the gate voltage is supplied
Turn on : Turn on the Gate Voltage supply and last turn On the Drain voltage supplies
Turn off : Turn off the Drain Voltage and last turn off the Gate voltage
Note
HM Series have internal DC blocking capacitors at the RF input and output ports
MAX
2500
-
-
-4
-
-
1500
-2
-
CONDITION
ZS = ZL = 50 ohm
Amp : Idq1 = 50mA
Idq2 = 250mA
Input Power = 20dBm
Gate Bias (Vgs1 and Vgs2)
Main Bias(Vds)
Mechanical Specifications
PARAMETER
Mass
Dimension
UNIT
g
㎜
TYP
2
20.5 x 15 x 4.8
REMARK
-
-
Korean Facilities : 82-31-250-5078 / [e-mail]
US Facility : 919-677-8780 / [e-mail]
1/7
All specifications may change without notice
Version 1.0